Papers by Keyword: FRAM

Abstract: Radio telemetry is used as a major way on monitoring flight test of airplanes. As information transition channel is disturbed or interrupted significantly during the blackout area during flight, the carrier information will not be transmitted normally. However, the airplane data during the blackout period has to be monitored seriously. This issue can be resolved by building re-issued data memory function into a telemetry system. This paper looks at the research of re-issued data memory technology and proposes a new design of re-issued data memory circuit for realizing the negative trigger delay storage of data flow in telemetry system during blackout period. The delayed data in the storage will be transmitted again later. The new designed circuit uses multiple re-issued data memory methods to satisfy the requirements of different telemetry tests and measurements, assuring complete data during airplane flight test.

Abstract: In this study is the use of the generator excitation system design parameters for distributed fieldbus technology and real-time data display module record, will transfer to the field bus data processing and real-time storage of a design. Generator current and terminal voltage and other electrical parameters by the CAN bus pass, when a failure occurs, the fault current and other electrical parameters display, and store it to MRAM or FRAM memory, and also through the external communications port to be transferred to PC and other networks. System uses magnetic resistance random access memory, ferroelectric memory extends the storage capacity, so that fault recording function can be achieved; application PIT and RTC, the timing accuracy of a millisecond, improve the recording wave function

Abstract: ZrO2 buffer layer and SrBi2Ta2O9 (SBT) thin films were deposited on the P-type Si(111) substrates by the R.F. magnetron-sputtering method. We studied the effect of the post-annealing of the ZrO2 buffer layer on the MFIS structure. We could conclude that the elements of Zr, Sr, Bi, and Ta etc. were diffused by the post-annealing, and according to the process with and without the post-annealing of the ZrO2 layer, the diffusion amount of Sr, Bi, Ta elements shows slight difference through the glow discharge spectrometer (GDS) analysis. From the results of the XPS analysis, we can confirm that a small amount of SiO2 and metallic Zr exist at the interface, and ZrO2 exists as the amorphous state with the weak binding energy before the post-annealing process. Contrarily, after the post-annealing of the ZrO2/Si structure, SiO2 and metallic Zr are observed at the wide range, but the bonding state of ZrO2 is strengthened.