Papers by Keyword: Ferroelectric Property

Abstract: The structure and electrical properties of Al2O3-doped 0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr1/2Ti1/2)O3 ceramic, which is the morphotropic phase boundary composition of the PZN-PZT system, were investigated. The addition of Al2O3 content transformed the crystal structure rom coexisting with rhombohedral to purely tetragonal structure. Furthermore, addition of Al2O3 decreased r, d33 and kp, but increased Curie temperature and enhanced the mechanical quality factor. inally, the P–E and s-E loops demonstrated decreased Pr, Ec and strain level with addition of Al2O3

Abstract: {0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2, respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.

Abstract: BiFeO3 films were prepared by chemical solution method on Pt/Ti/SiO2/Si substrates. The ferroelectric properties of Pt/BiFeO3/Pt capacitors were investigated, and the effect of recovery annealing applied after Pt top electrode deposition was discussed. The pure phase film with recovery annealing exhibits lower leakage current and higher remanent polarization than those without post-annealing. The leakage current is reduced by three orders of magnitude, the remanent polarization increases from 2.59μC/cm2 to 3.44μC/cm2. The recovery anneals applied after top electrode deposition may optimize the ferroelectric performance by removing the effect of structural defects formed by sputtering.

Abstract: Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Abstract: Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

Abstract: Lead-free piezoelectric ceramics of (Na0.8K0.2)0.5Bi0.5TiO3+x wt.% Mn (abbreviated as NBKT-x% Mn, x=0~0.5) were synthesized by solid-state reaction. The grain growth of the ceramics was restrained by Mn-doping at a certain extent. The mechanical quality factor Qm increases and the dielectric loss tanδ decreases with the increase of Mn-doping. Best piezoelectric properties were obtained for the composition of NKBT-0.2%Mn: d33=158 pC·N-1, tanδ=2.9% at 1 kHz, Qm=110 and kp=30%. The P-E loops show that remnant polarization Pr and coercive field Ec decrease slightly with the amount of the Mn2+ increasing up to 0.2wt.% and then increase as the content of Mn2+ increases further. NKBT-0.5wt. % Mn exhibits strong ferroelectricity with remnant polarization Pr = 38μC/cm2.

Abstract: Polarization switching and domain dynamics in unpoled and poled crystals of bismuth titanate by applying electric field along the crystallographic c axis were investigated through polarization measurements and domain observations by optical microscope and piezoelectric force microscope. Poled crystals showed a well-saturated polarization hysteresis with a remanent polarization of 4.4 μC/cm2 and a coercive field of 4.7 kV/cm. Domain observations reveal that lenticular domain acts as an initial nucleus during polarization switching. The sidewise motion of the lenticular-domain walls and resultant single domain state were easily established for the poled crystals, while the lenticular domains observed in unpoled crystals were clamped even though a high electric field was applied to them.

Abstract: Multilayered BaTi1-xSnxO3 (BTS) ceramics with different Ti/Sn ratios were produced by pressing and sintering at 1420 oC for 2 hours. X-ray diffractometry, scanning electron microscopy and energy dispersive spectroscopy were used for structural, microstructural and elemental analysis, respectively. The dielectric and ferroelectric behavior of sintered samples was studied, too. It is found that in ingredient materials, with increasing Sn content, the tetragonality decreases; Curie temperature moves towards room temperature, while the maximum of the dielectric constant increases, and also, they becomes less hysteretic. It is noticed that multilayered BTS ceramics with different Ti/Sn contents have a broad transition temperature and show a relatively high dielectric constant in a wide temperature range. It is shown that dielectric properties of these materials may be modified by a combination of different BTS powders as well as layers number.

Abstract: Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with Pb1.1Zr0.53Ti0.47O3 and PbO targets. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the partial pressure ratio during PbO deposition affects the interface condition of PbO/Si and the chemical state of Pb existing at the surface of the PZT thin film. The maximum value of the memory window is 3.0 V under the applied voltage of 9V for Pt/PZT (200 nm 400°C)/PbO (80 nm, 300°C)/Si structures with the PbO buffer layer deposited at the partial pressure of 7:3. From these results, we could assume that the PbO buffer layers play a role of the diffusion barrier between the PZT thin film and the Si substrate as well as the seed layer.

Abstract: A 16Mb 1T1C FeRAM device was successfully fabricated with the lead-free BLT capacitors. The average value of the switchable polarization obtained in the 32k-array (unit capacitor size: 0.68 μm2) BLT capacitors was about 16 μC/cm2 at the applied voltage of 3V and the uniformity within an 8-inch wafer was about 2.8%. But random bit failures were detected during the measuring the bit-line signal of each cell. It was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the grain size and orientation was optimized by varying the process conditions of nucleation step. The random bit failure issue was solved by adopting the optimized BLT film. The cell signal margin of the optimized FeRAM device was about 340 mV.