Papers by Keyword: Gel Technique

Abstract: In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology was adopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machining performances of the polishing pad, the influences of abrasive sizes, abrasive concentration and polishing parameters (pressure, rotating speed and machining time) on the silicon wafer were investigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied to examine the surface morphologies and surface roughness of the polished silicon wafer respectively. The experimental results showed that the surface roughness of silicon wafer decreased with the decreasing of abrasive grits and the increasing of abrasive concentration and polishing parameters (pressure, rotating speed and polishing time) when polishing silicon wafer with the polishing pad containing Al2O3 abrasive. When abrasive concentration, polishing pressure and polishing time reached certain values, few changes would happen for the silicon wafer.

Abstract: In this paper, an experimental study was carried out to fabricate a new kind of ultra-fine abrasive polishing pad by means of gel technology. The polishing pad was then used to polish silicon wafer on a nano-polishing machine. Optical microscope and ZYGO 3D surface analyzer were applied to observe the surface morphologies of the silicon wafer. Meanwhile, surface morphology of ultra-fine abrasive polishing pad was observed by ESEM. No obvious gathering of ultra-fine grains were found on the ultra-fine abrasive pad. The surface roughness (Ra) of the silicon wafer was reduced to 0.3nm after being polished by the abrasives with average grain size of 10μm. Mirror surface can be realized after being polished with the polishing pad.