Papers by Keyword: Giant Step Bunching

Abstract: We have developed the computer simulation including cluster effect and Schwoebel effect and investigated the conditions generating GSB using the simulation. We have demonstrated that the simulation developed can reproduce GSB. We have found for the occurence of GSB that there exists a threshold value of the surplus flux rate of Si-or C-source gases not contributing to growth, which depends on the flux rate of each source gas, namely the boundary between with and without GSB. It is noted that this boundary does not depend on the off-angle of substrates. We have also found the mechanism for explaining the occurrence of wavy surface morphplogy.

Abstract: Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

Abstract: In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the clusters by adding H2 gas. We found the boundaries between surfaces with and without giant steps to show Arrhenius-type behavior. This behavior agreed with our predictions deduced from a chemical reaction model that takes the cluster effect into account, suggesting that giant step bunching is attributable to the formation of clusters on SiC.