Papers by Keyword: Goss Orientation

Abstract: Abnormal grain growth (AGG) takes place in many metallic systems especially after recrystallization of deformed polycrystals. A famous example of AGG in metallic system is the Goss texture in Fe-3%Si steel. During high temperature annealing of Fe-3%Si sheet, a few near Goss {110} <001> grains grow exclusively fast and consume the matrix grains. Therefore, the grains which have near Goss orientation have special advantage over other grains. As a new approach to the growth advantage of AGG, we suggested the solid-state wetting mechanism, where a grain wets or penetrates the grain boundary or the triple junction of its neighboring grains. The solid-state wetting mechanism for the evolution of the Goss texture in Fe-3%Si steel was studied experimentally and by phase-field model (PFM) simulation.

Abstract: A Goss-oriented single crystal was cold rolled up to 89 % thickness reduction, and subsequently annealed at 550°C or 850°C. During deformation most of the initially Goss-oriented material rotated into the two symmetrical {111}<112> orientations. In addition, Goss regions were observed related to microbands or microshear bands. Goss regions in microshear bands formed during straining, whereas Goss regions between microbands were retained from the initial Goss orientation. The recrystallisation texture for annealing temperatures of both 550°C and 850°C is characterised by a Goss texture. However, the origin of the Goss recrystallisation nuclei appeared to be different for the different annealing conditions. In the material annealed at 550°C, the Goss texture originated from the Goss regions in the microshear bands. In contrast, for an annealing temperature of 850°C, the Goss grains between the microbands are likely to form recrystallisation nuclei.

Abstract: A silicon steel single crystal with initial Goss orientation, i.e. the {110}<001> orientation, was cold rolled up to 89 % thickness reduction. Most of the crystal volume rotates into the two symmetrical equivalent {111}<112> orientations. However, a weak Goss component is still present after high strain, although the Goss orientation is mechanically instable under plane strain loading. Two types of Goss-oriented crystal volumes are found in the highly deformed material. We suggest that their origin is different. The Goss-oriented regions that are observed within shear bands form during the cold rolling process. In contrast, those Goss-oriented crystal volumes that are found inside of microbands survive the cold rolling.

Abstract: An initially Goss-oriented ({110}<001> preferred crystal orientation) FeSi single crystal was cold rolled up to 89 % reduction in thickness. The microstructure and texture of shear bands, which develop at strains higher than 70 %, were investigated by the EBSD (electron backscatter diffraction) technique. The texture components within and ouside of the shear bands are the two symmetrical {111}<112> orientations and the {110}<001> orientation. We conclude that crystallographic slip is the deformation mechanism that is active both within and outside of the shear bands.