Papers by Keyword: HPSI

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The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

Authors: Giovanni Alfieri, Lukas Kranz, Lars Knoll, Vinoth Sundaramoorthy

Abstract: The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Authors: Jason R. Jenny, D.P. Malta, M.R. Calus, Stephan G. Müller, Adrian R. Powell, Valeri F. Tsvetkov, H. McD. Hobgood, R.C. Glass, Calvin H. Carter Jr.