Papers by Keyword: High Electron Mobility Transistor HEMT

Abstract: Ohmic properties, thermal stability and surface morphology of Al-based and non-aluminium metallizations are investigated in dependence on the annealing temperature and initial composition. Non-aluminium contacts show poor ohmic properties, while contact resistivity of 3.47x10-5 Ω.cm2 is achieved for Ti/Al/Ti/Au metallization with a former-Ti/Al ratio of (30 wt.% /70 wt.%). Thermal properties of the Al-based metallization are improved by application of Mo layer as a barrier under the upper Au film of the contact structure. These contacts show excellent thermal stability at operating temperatures as high as 400oC. The less Al amount in the contact composition and Mo barrier layer contribute to the smoother surface and better edge acuity.

Abstract: A new chemical mechanical polishing process (ACMP) has been developed by the Penn State University Electro-Optics Center for producing damage free surfaces on silicon carbide substrates. This process is applicable to the silicon face of semi-insulating, conductive, 4H, 6H, onaxis and off-axis substrates. The process has been optimized to eliminate polishing induced selectivity and to obtain material removal rates in excess of 150nm/hour. The wafer surfaces and resultant subsurface damage generated by the process were evaluated by white light interferometery, Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and epitaxial layer growth. Residual surface damage induced by the polishing process that propagates into the epitaxial layer has been significantly reduced. Total dislocation densities measured on the ACMP processed wafers are on the order of the densities reported for the best as grown silicon carbide crystals [1]. Characterization of high electron mobility transistors (HEMTs) grown on these substrates indicates that the electrical performance of the substrates met or exceeded current requirements [2].

Abstract: In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.