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Articles by keyword: «High Temperature Annealing»

• B- and P-Doped Si_0.8Ge_0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor
  Published in: Electroceramics in Japan IX (p99)
• Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p803)
• Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2007 (p429)
• Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p188)
• Grown-in Defects in High Temperature Annealed Si Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p73)
• Hydrogen Annealed Silicon Wafer
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p19)
• Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2006 (p877)
• Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
  Published in: Silicon Carbide and Related Materials 2010 (p417)
• Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p371)
• Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure
  Published in: Silicon Carbide and Related Materials 2008 (p643)
• Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
  Published in: Silicon Carbide and Related Materials 2006 (p595)
• Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p375)
• On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
  Published in: Silicon Carbide and Related Materials 2011 (p247)
• Study of Contact Formation by High Temperature Deposition of Ni on SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p981)
• Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
  Published in: Silicon Carbide and Related Materials - 2002 (p685)