Papers by Keyword: I-V Characteristic

Abstract: The nanocomposite of polyaniline (PANI) and bimetallic nanoparticles of silver and iron were prepared by the oxidative polymerization of aniline and the reduction process of bimetallic compound with the presence of nitric acid and PVA. The nanocomposite thin films in various compositions were deposited using spin-coating technique. The films were characterized by UV-visible spectroscopy to study the optical and structural properties. The microphotograph from TEM image shows the nanospherical of Ag-Fe alloy particles in 5 – 25 nm diameter size. The sensitivity performance was tested using I-V measurement to obtain the changes of resistivity before and after the incubation with E. coli bacteria in water. UV-visible absorption bands show the single absorbance peak at 422 – 424 nm in each band indicating the Ag-Fe alloy nanoparticles form. I-V characteristic shows the sample which contains Fe-rich Ag-Fe alloy performed high sensitivity on E. coli.

Abstract: Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.

Abstract: Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

Abstract: The bipolar plates were fabricated using compression molding of graphite (GR), carbon black (CB), multi-wall carbon nanotubes (MWNTs), carbon fibers (CF) and powder type epoxy resin. The electrical conductivity and flexural properties of the composites was increased with increasing the content of fibrous conducting fillers e.g., MWNTs and CF. However, when particulate fillers such as CB and GR were used, the electrical conductivity was increased, but the flexural properties deteriorated with increasing filler content up to certain content. A comparison was also made between the current-voltage (I-V) performances of fabricated composite bipolar plates and commercial graphite bipolar plate. The I-V characteristic in single cell test exhibited more uniform power density at both higher and lower current density and single cell performance increased with increasing the electrical conductivity.

Abstract: The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.

Abstract: We study electron transport properties of some molecular wires and a unconventional disordered thin film within the tight-binding framework using Green's function technique. We show that electron transport is significantly affected by quantum interference of electronic wave functions, molecule-to-electrode coupling strengths, length of the molecular wire and disorder strength. Our model calculations provide a physical insight to the behavior of electron conduction across a bridge system.

Abstract: Some multi-walled carbon nanotubes (NMWTs) were firstly dispersed in aqueous solution with surfactant ultrasonic dispersion process, then mixed into cement matrix, casting six groups cement-based materials filled with varying NMWTs additions (nwt) (NFCMs), and as comparison, the plain referential cement paste was fabricated. The ampere-volt (I-V) characteristics and percolation threshold of this type of nanocomposites were focused by four-electrode method. Results show that, the I-V features of the reference has obvious nonlinearity due to polarized reaction within cement hydrated electrolytes after being induced by passing 0~±30 V voltages, those of the NFCMs with six different nwt still have somewhat nonlinear traits, which mainly attribute to the double-layer coatings between NMWTs and out-encapsulated cement hydration isolation. The resistivity (ρ) of the NFCM nanocomposite steadily decreases with the increment of nwt, which contributes to superior capabilities of charge transporter and near-field emission of NMWTs, and the overlapped chance of physical contacts between conducting aggregates of NMWTs and bulk matrix increases by nwt enhancing; although there is still some fluctuation on ρ, but it becomes weaker and weaker by nwt increasing. The percolation threshold of the NFCMs is nwt being 2.0%, and the integrated network pathways at micro-scale form between NMWTs each other through the correspondent NFCM, also revealed in microstructure.

Abstract: This study deals with the interfacial reactions and electrical properties of Ta/4H-SiC contacts. Tantalum thin films (~100 nm) were deposited onto SiC wafer at room temperature by argon ion beam sputtering. The samples were then heated in high vacuum at 650°C, 800°C or 950°C for 30 min. X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (XRD), Auger electron spectroscopy (AES) and current-voltage (I-V) technique were used for characterising the samples. Ohmic contact is formed in the studied samples after annealing at or above 800°C even though considerable amount of metallic Ta still exists. The reaction zone possesses a layered structure of Ta2C/Ta2C+Ta5Si3/SiC. High enough temperature is needed to provide for sufficient interface change to tailor the contact properties.

Abstract: In this work, the influence of magnetic field on I-V characteristics of bifacial silicon solar cell n+-p-p+ structure is studied under constant multispectral illumination. After resolution of continuity equation related to photogenerated minority carriers’ density in the base region of this cell, MATLAB numerical simulations of excess minority carriers’, photocurrent densities and junction photovoltage profiles, have been developed with magnetic field in the bulk of the base region. In the same way, the IV characteristics have been studied with magnetic field. It has been demonstrated that the I–V characteristics decreased. It also has shown how the I–V characteristics changed.

Abstract: Indentation-induced structural phase transitions in single crystal Si(100) and amorphous silicon a-Si have been investigated for indentations made at room temperature and at 77 K. The experimental techniques employed were (1) Raman microscopy and (2) in situ electrical resistance measurement of the indentation region of the plastically deformed silicon. The Raman spectra from residual indentations revealed that although phase transitions did occur when indentations were made at room temperature, there were no phase transitions when indentations were made at 77 K. This difference in behaviour has been explained on the rise of temperature during the room temperature indentations, which may assist the phase transition process. The in situ electrical measurements have revealed that the deformed Si(100) yielded Ohmic behaviour, consistent with the view that during the indentation the cubic silicon transforms to the beta-Sn metallic phase (i.e. body-centre tetragonal).