| Paper Title | Page |
|---|---|
|
4H- to 3C-SiC Polytypic Transformation during Oxidation Authors: Robert S. Okojie, Ming Xhang, P. Pirouz, Sergey P. Tumakha, Gregg Jessen, Leonard J. Brillson |
451 |
|
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi |
1137 |
|
Current Transport Mechanisms in 4H-SiC PiN Diodes Authors: Nicolas Camara, Edwige Bano, Konstantinos Zekentes |
1017 |
|
Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes Authors: Uwe Zimmermann, Anders Hallén, Bo Breitholtz |
1323 |
|
Diffusion-Welded Al Contacts to p-Type SiC Authors: Oleg Korolkov, Toomas Rang, Alexander Syrkin, Vladimir Dmitriev |
697 |
|
Effect of Carbon Fillers on the Performance of a Composite Bipolar Plate for Fuel Cells Authors: Jin Sun Lee, Gye Hyoung Yoo, Nam Hoon Kim, Joong Hee Lee |
1079 |
|
Effect of Ho Amount on Microstructure and Electrical Properties of Ni-MLCC Authors: Hirokazu Chazono, Hiroshi Kishi |
183 |
|
Electrical Characterization of Ni/Porous SiC/n-SiC Structure Authors: A.E. Grekov, Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan |
419 |
|
Electrical Properties of Grain Boundaries in Ceramic Semiconductors Authors: K. Mukae |
317 |
|
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki |
1203 |