Papers by Keyword: IR-Spectroscopy

Abstract: A novel and efficient method was established to investigate isobutane/2-butene alkylation. In this method FT-IR spectroscopy was used to determine the presence of the composite ion (AlCuCl5-) in the composite ionic liquid (CIL). The trimethylpentane selectivity of the composite ionic liquid for isobutane/2-butene alkylation was also estimated by monitoring the shift of IR absorption bands in the range 1636–1685 cm-1. A detailed study of the alkylation of isobutane /2-butene in CIL media has been conducted using 1-alkyl-3-methylimidazolium halide/X aluminum chloride-y cuprous (I) chloride ([CnMIM]Cl/xAlCl3-yCuCl) encompassing various alkyl groups (n=4:B, butyl-, n=6:H, hexyl-, and n=8: O, octyl-)respectively. The ionic liquids showed higher selectivities of C8 as well as the TMP/DMH ratios in alkylates. The better catalytic performance of CIL can be attributed to the presence of the composite ion in it, and the catalytic performance of the chloroaluminate ionic liquid can be indicated by the 1685 cm^-1 band of FT-IR spectroscopy.

Abstract: The inability to sufficiently prevent and/or repair chemically-etched dental enamel serves as one example that underlines the importance and need for the development of innovative biomaterials for therapeutic applications. In this work we explored the seeding capability of 225 ppm and 1100 ppm fluoride with and without a novel β-tricalcium phosphate-silica-urea (TCP-Si-Ur) biomaterial (concentrations of 20, 40, 80, and 200 ppm) to mineralize into acid-etched bovine enamel. The nature of the mineralization was evaluated by measuring the fluoride and phosphate uptake into the eroded enamel, as well as the orthophosphate microstructure using infrared (IR) spectroscopy. These enamel fluoride uptake and IR experiments revealed a fluoride dose response exists for eroded enamel treated with 225 and 1100 ppm F. The inclusion of 20, 40, and 80 ppm TCP-Si-Ur with 225 ppm F was similar to 225 ppm F alone and did not produce a fluoride uptake dose response; however, 200 ppm TCP-Si-Ur combined with 1100 ppm F improved raw fluoride uptake relative to 1100 ppm F. Furthermore, we found the combination of either 225 ppm or 1100 ppm fluoride plus TCP-Si-Ur at different loading levels leads to unique and significant mineral integration into the PO4 enamel network, including the formation of P-F bonds. The observations reported herein demonstrate the combination of fluoride plus a novel TCP-Si-Ur biomaterial produces synergistic mineralization and bears significantly on eroded enamel microstructure.

Abstract: Organofunctionalised silica materials are of great interest once they combine a high surface area and a narrow pore size distribution with the advantage of owing organic ligand properties. This paper describes the organofunctionalisation of an amorphous silica with 2-mercaptobenzimidazole. The characterization of such material was performed by elemental analysis (EA), IR spectroscopy, thermogravimetry (TG), differential scanning calorimetry (DSC) and solid state 13C and 29Si NMR spectroscopy.

Abstract: The effect of dc discharge treatment at the anode and cathode on the surface properties of polytetrafluoroethylene (PTFE), tetrafluoroethylene–hexafluoropropylene copolymer (FEP) and poly(vinylidene fluoride) (PVDF) polymer films was studied. It was found that the modification of the films under conditions that ensure the separation of the discharge active species acting on the polymer materials makes it possible to achieve substantially lover values for the contact angle and higher values for the surface energy than in the case of other modes of discharge. The changes in the composition and structure of the films were studied by means of IR spectroscopy and electron spectroscopy for chemical analysis (ESCA). It was found that new oxygen-containing groups are formed on the polymer surface as a result of dc discharge treatment. To appreciate the adhesion characteristics of fluoropolymer films modified by dc discharge, American Society for Testing and Materials Standard Test Method for Measuring Adhesion by Tape Test (ASTM D3359-02) was used. The adhesion tape Scotch 810 and vacuum metallization of the film surface are account for the basis of this method. It was found that the adhesive bonding strength of the plasma treated films substantially increased.

Abstract: In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

Abstract: We present infrared (IR) spectroscopy measurements on carbon-rich, germanium-doped Czochralski-grown (Cz-Si) subjected to irradiation with 2 MeV electrons. The study is focused on the effect of germanium doping on the production of carbon-related defects CiCs, CiOi and CiOi(SiI). For carbon concentrations [Cs] up to 11017 cm-3 the production of the defects increases with the increase of Ge content, for [Ge] up to 11020 cm-3. However, for carbon concentrations around 21017 cm-3 the production of these defects shows a decrease for samples with [Ge]=21020 cm-3 in comparison with those of [Ge]=21019 cm-3. The results are discussed taking into account the effect of germanium on the annihilation of vacancies and self-interstitials in the course of irradiations. In the first case, due to the temporary trapping of vacancies by Ge atoms in the course of irradiation, more self-interstitials are available for the production of carbon interstitials (Cs+ SiI Ci), leading finally to an increase of the carbon-related defects. In the second case, and for [Ge] of the order of ~1020 cm-3 or higher, Ge atoms tend to form large clusters. These clusters attract primary defects facilitating their annihilation on them. As a result, the availability of self-interstitials decreases, which finally leads to a decrease of the carbon-related defects.

Abstract: We report studies of defects in electron-irradiated Czochralski-grown silicon (Cz-Si) subjected to thermal treatments at 1000oC and 1130oC with or without the application of high hydrostatic pressure of ~ 11 Kbars, prior to irradiation. The work is primarily focused on the impact of the pre-treatments on the production rate of the VO defect and its conversion to the VO2 defect. To this end, IR spectroscopy measurements were carried out and the amplitudes of the VO band (830 cm-1) and the VO2 band (888 cm-1) were monitored in the course of an isochronal anneal sequence up to ~ 550oC. Thermal treatments at 1000oC result in a reduction of the production rate of the VO defect. This rate however increases when pressure is applied during the treatment. The opposite behavior is observed for thermal treatments at 1130oC. The production rate of the VO increases slightly in heat treated samples but decreases substantially when high pressure is applied. Similar trends show the conversion of the VO to the VO2 defect for the corresponding treatments. The results are discussed taking into account the oxygen precipitates formed at the various treatments and their impact on the amount of primary defects available during irradiation which affects the production of the vacancy-oxygen defects.

Abstract: A comprehensive investigation has been made of a set of historical leather samples from the 17th – 20th centuries. For the investigation of the degradation degree spectral techniques in IR (MID and NIR) and UV-VIS have been used, and collateral Micro Hot Table (MHT) determination as well. Changes in the physical and chemical characteristics values of the leather issues due to the interaction with the environmental factors during a long period of time were used in order to identify the possible deterioration ways.

Abstract: A series of amorphous hydrogenated carbon layers doped with nitrogen (a-C:N:H) was deposited on Si (001). The synthesis was performed from gaseous N2/CH4 mixture using PE CVD (RF CVD technique; 13,56 MHz). An influence of the processing conditions on layer-growth rate was analysed. Thickness of the layers deposited during 1 hour at various temperatures, pressures and RF powers were taken as a basis. It has been proved that the substrate temperature is a key parameter for the layer formation. Temperature rise results in the deposition rate decrease. This unfavourable effect may be reduced by application of increased gas pressure and/or higher plasma RF generator power. At optimal conditions (46 oC; 0,8 Tr; 60 W) the deposition rate reaches up to 600 nm/hour. FT-IR spectra of the layers were measured within 1250 - 4000 cm-1 and discussed with regard to the atomic structure. The intensities of the characteristic absorption bands were compared. The results show that the layers have various N/C ratios according to the applied processing conditions.

Abstract: Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pretreatments involved thermal anneals at 450 oC and 650 oC under high hydrostatic pressure. We mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450 oC treatment although the amplitudes of the TDs bands were reduced. On the other hand, the amplitude of the VO band was found lower in the samples treated at 650 oC, indicating an influence on the production of the oxygen-vacancy defects. The results are discussed and explanations are suggested concerning possible interactions between thermal and radiation defects.