Papers by Keyword: Implantation Profile

Abstract: The nitrogen implanted profiles in cobalt films that are generated by N₂⁺ bombardment with three energies of 0.5, 2.0 and 5.0 keV are simulated by the analytical Schulz-Wittmaack expression and the SRIM program, respectively. Taking the both simulated profiles as concentration-depth profiles, the corresponding measured AES depth profiling data of implanted nitrogen are perfectly fitted by the Mixing-Roughness-Information depth (MRI) model.

Abstract: The results of the Monte Carlo (MC) simulations, using GEANT4 codes, indicate the enhancement of the fraction of the e+ in the denser regions of the sample embedded by the less dense environment. The positron lifetime measurements, performed for two stacks of layers consisting of pure aluminum and silver do not seem to reveal this effect. Some features of the e+ distribution detected in the experiments are not reproduced by the MC simulations.