Papers by Keyword: In-Doped

Abstract: CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm.

Abstract: In-doped ZnO thin film has been found as one of the most promising materials in the optoelectronics, but its optical properties are rarely reported. We calculated optical band gaps and optical properties of Zn_1-xIn_xO with different In doping by using first-principle. The results reveal that the lattice constants of Zn_1-xIn_xO increase linearly with the doping increasing and Zn_1-xIn_xO (x=0.125, x=0.25) crystal comes to be degenerate semiconductor with band gap reduced. The imaginary part of dielectric function has an increasing trend and the absorption capacity significantly increases in ultraviolet (UV) range after doping. Also there is an obvious red-shift in the absorption spectrum. The reflectivity and energy loss spectrum were investigated, too. The results can provide a theoretical reference for finding appropriate UV protective material.

Abstract: In-doped ZnO nanodisks were successfully fabricated by thermal evaporation Zn, In2O3 and graphite powder mixture without catalyst. Morphology, structures and components of ZnO nanodisks were investigated by SEM, HRTEM, EDS and X-Ray diffraction. ZnO nanodisks have perfect hexagonal shape, with 1~3μm size and 40~100 nm in thickness. The nanodisks are single-crystalline ZnO with wurtzite structure and In content of nanodisks reaches 2.2%. The growth along [0001] is suppressed leading to the formation of ZnO nanodisks. Room temperature photoluminescence spectra of the nanodisks shows that the UV emission peak blueshifts and becomes broader after doping.

Abstract: The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.