Papers by Keyword: Incident Energy

Abstract: Molecular dynamic simulation for Co cluster deposition on Si substrate was investigated in this work. The surface roughness and the interface mixing will be evaluated for the deposited film quality under different incident energies and substrate temperatures. The effect of thermal annealing on the ability of gap filling will be discussed by a slip vector. The results indicate that the incident energy has dominant effect on the surface roughness, and there is a minimum surface roughness value around the incident energy of 8 eV. However, the substrate temperature has little effect on the surface roughness. For interface mixing, the simulation indicates the easy diffusion of Co atoms into Si substrate. However, increasing either the incident energy or the substrate temperature could not change much the mixing conditions. As for the ability of gap filling, it is clear that the thermal annealing does improve this ability and obtains better surface roughness and interface mixing.

Abstract: Scratch tests were carried out to examine the influence of gas pressure during ion bombarding on adhesion between CrN coatings and aluminum alloy using nitrogen and argon gas. The critical load clearly increased with increasing the nitrogen gas pressure. However, argon gas pressure hardly affected the critical load. The result of SIMS showed that ion bombardment in nitrogen gas generated high Cr content layer at the aluminum substrate surface and the Cr content increased with increasing the pressure. The ion bombardment in argon gas generated low Cr content surface layer and the pressure hardly affected the critical load. Thus, the high Cr content layer by ion bombardment in the high nitrogen pressure improved adhesion between CrN coatings and aluminum alloy

Abstract: Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.