Papers by Keyword: Insulated Gate Bipolar Transistor

Abstract: In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

Abstract: A Full Hole-barrier Trench gate Insulated Gate Bipolar Transistor (FH-TIGBT) device structure is proposed for the first time. Compared with Carrier Stored Trench IGBT (CSTBT), which adds a carrier stored n layer between p base and n base in Trench IGBT (TIGBT), the new structure appends an n region located in the bottom of the trench gate. The result of Process and device simulations shows that the proposed device has lowered saturation voltage and larger capability of carrying current compared to either conventional trench IGBT or CSTBT. And the characteristics of turn-off time and breakdown voltage have negligibly changed. Further more, it has strongly positive temperature coefficient of on-state voltage, which means paralleling is very simple for the new device.

Abstract: In this paper, we introduced a P-buried (P_b) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The P_b layer, with carrier concentration of 5x10¹⁶ cm^-3, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT.

Abstract: The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.

Abstract: The performance of a 12kV planar Clustered Insulated Gate Bipolar Transistor (CIGBT) is compared to an equivalent IGBT in 4H-SiC through extensive 2D numerical simulations. The CIGBT shows 40% reduction in Eoff-Vce(sat) trade off losses with a short circuit endurance time of more than 10µs.

Abstract: Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

Abstract: The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.