Papers by Keyword: Intense Pulsed Ion Beam

Abstract: Two-dimensional numerical research has been carried out on the ablation effects of metal silver target irradiated by high intensity pulsed ion beam (HIPIB) generated by TEMP type accelerator. Temporal and spatial evolution of the ablation process of the target during a pulse time has been simulated. We have come to the conclusion that the melting and evaporating process begin from the surface and the target is ablated layer by layer when the target is irradiated by the HIPIB. Meanwhile, we also obtained the result that the average ablation velocity in target central region is about 4 m/s, which is far less than the ejection velocity of the plume plasma formed by irradiation.

Abstract: We report a modification method for Gold target by intense pulsed ion beam (IPIB) irradiation. Based on the temporal and spatial distribution models of the ion beam density detected by Faraday cup in the chamber and the ions accelerating voltage, the energy deposition of the beam ions in Au is calculated by Monte Carlo method. Taking this time-dependent nonlinear deposited energy as the source term of two-dimensional thermal conduction equation, we obtain the temporal and spatial ablation process of metal Au during a pulse time. The top-layer Gold material in thickness of about 0.25μm is ablated by vaporization and the layer in thickness of 1.40μm is melted after one shot at the ion beam density of 300 A/cm2.

Abstract: Nitriding of titanium was achieved in a vacuum of ~2×10-2 Pa by applying intense pulsed ion beam (IPIB) irradiation. Various phases including ‘pure’ nitrides (e.g. Ti2N, TiN) as well as carbonitrides (e.g. TiC0.3N0.7) were found on the IPIB-irradiated surfaces that depended on the ion beam intensity, shot number, and sample position with respect to the ion beam axis. It was found that the nitrides were preferably produced at moderate beam intensity by which the nitriding depth increased greatly with multi-shot irradiation. No or less nitrides were produced under irradiation of very high intensity or less number of shots. It is demonstrated that the IPIB nitriding process is very efficient even in vacuum where the residual N2 can readily react with melted Ti surfaces under IPIB irradiation. The origin of incorporated C in the nitrides is mainly attributed to the anode material of ion diode used in the IPIB apparatus.