Papers by Keyword: Interface Chemistry

Abstract: Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O2 pressures of 7×10-6 Torr. An interface layer was observed at the initial growth of Er2O3 film on Si, which is supposed to be attributed to the effect of the Er atom catalytic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is a little insufficient at a high substrate temperature.

Abstract: Utilization of chemical potential diagrams is powerful in predicting the chemical stability of dissimilar materials and analyzing the diffusion path when reactions are proceeded. Since practical materials consist of many components so that construction of chemical potential diagrams for the multi-component systems becomes crucial. There is one powerful way of treating phase equilibria for such complicated systems in chemical potential diagrams; that is, a construction of three dimensional diagrams, although all phase relations are not visible in such a diagram. To make phase relations visible, there are several ways; one is to make selected phase transparent. This makes it possible to examine the detailed relations between selected materials. Second one is to make dissections at selected values for the chemical potential of selected chemical species. By swinging the dissected value, the change in phase relations can be examined as a function of given chemical potential. Some examples will be given for the formation of oxide scale on ferritic alloys.