Papers by Keyword: Inverted Pyramid

Abstract: A 3D all-solid-state thin film lithium-ion microbattery (TFLM) with inverted pyramid arrays is fabricated by microfabrication technology. Compared with 2D TFLMs, the effective area of this 3D TFLM increases more than 30%. The 3D TFLM prepared by magnetron sputtering is composed of LiCoO₂ cathode, LiPON solid electrolyte, and copper doped SnO_x anode. The 3D TFLM is tested by electrochemical measurements, and the results show that it has reliable capacity and excellent performance.

Abstract: This paper proposes an epoxy-based anti-reflective micron structure layer for solar cell modules. A Solidworks software is used to design the micro-structure layers with different size and shapes (inverted pyramid and micro-lens). Then, An optical simulation software, Tracepro, is used to simulate the anti-reflection efficiency under the standard lighting source of AM1.5G. The difference between the flat layer and micro-structured layer has been analyzed to obtain the best micro-structure layer for solar cell modules. From the simulated results, the inverted pyramid textured layer that each pyramid’s width is 10μm and height is 5μm can improve the flux increment rate up to 13% compared with the flat layer at normal incidence. However, the best efficiency for micro-lens structure layer increases about 10% with radius of 25μm and height of 18.75μm and 25μm at 15o incidence. In addition, the thinner the Epoxy layer is, the better the anti-reflection efficiency is. Therefore, the proposed Epoxy-based micro-structure can improve the solar module for obtaining higher efficiency and best qualities.

Abstract: In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the <11-20> directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.

Abstract: Triangular defects and inverted pyramid type defects formed during homoepitaxial growth on 4H-SiC Si face, 4° off-cut towards [11-20] direction have been investigated. Growth parameters responsible for triangular defect formation were identified and optimized for its reduction in this study. It was found that although the high temperature reduces the density of inverted pyramid type defects, it is not the only remedy for reducing their density and cleanliness of susceptor along with the initial growth condition plays a major role in the formation of these defects.