Papers by Keyword: Ion-Beam Assisted Deposition

Abstract: Aiming at the special requirements for filter film of the optical prismatic system, basing on the design theory, and choosing the appreciate film materials, a high reflectance film and a splitter film are designed respectively. The films can satisfy with the optical requirement perfectly, when the incidence light is P polarized at the 25 angle in the range of the visible wavelengths (450nm~650nm). During the preparation process, the optical film absorption is solved by continually optimizing the process parameters, such as temperature, rate of evaporation and ion assisted deposition parameters, etc. Meanwhile, the error produced in the process of preparation is analyzed and revised through several repeated tests and researches, so that the control precision of layer thickness is improved. Finally the high-reflective film with average reflectance over 99.5% in the 450~500nm band and the beam splitting film with transmittance and reflectance ratio of 1:1 and 1:2 are prepared respectively (both errors are below 1%) in the 450~650nm band. After the spectrum testing and analyzing, the spectrum curve shows that all the parameters meet the basic requirements for usage.

Abstract: An aluminum nitride (AlN) target for Al-Kα X-ray source with high power and long service life has been developed by N2 + ions assisted Al vapor deposition method (IBAD). The AlN film formations were carried out at the Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with a fixed low-energy N2 + ion of 1 keV. The films were deposited on Cu substrate at room temperature. The AlN films were characterized by an X-ray diffraction, an electron probe X-ray microanalysis and a Knoop-hardness measurement. The AlN deposited at the Al deposition rate of 0.5 nm has a N/Al ratio of 0.4, a Knoop-hardness of ~1500 and a low resistance of ~0.2 . Comparison of durability test between the AlN target and a conventional Al target was performed. It has been revealed, after 500 hours under an electron bombardment of 300 mA at 20 kV, that there were no change of morphology and X-ray intensity on the AlN-surface whilst cracks due to the heat-cycle fatigue covered the Al-surface.