Papers by Keyword: Ionized Impurity Scattering

Abstract: In multi-layer structures impurity scattering is effectively reduced by the modulation doping in order to achieve high charge carrier mobility and, as a consequence, better device performance. In this paper, the thermoelectric properties of superlattices when electrons are scattered by strongly screened ionized impurities are discussed. In low-temperature and strong screening circumstances, dependence of the thermopower, power factor, and figure of merit on the superlattice period, miniband width, and screening radius is found. For the specified superlattice parameters and ionized impurity concentration, the figure of merit reaches the value of 2.6. The thermopower of the superlattices five times exceeds that of bulk samples.

Abstract: The main scattering mechanisms reducing the channel mobility and thus the typical performance of a SiC power MOSFET are reviewed. It is demonstrated that the Poisson equation within the drift-diffusion model is able to account for the effects of ionized impurity scattering. Furthermore, a correlation between the size of macro-or nanosteps at the SiC/SiO₂ interface and the corresponding fitting parameter within the Lombardi surface roughness model is established. By qualitatively reproducing the typical performance of a commercial SiC power MOSFET a baseline for the TCAD modeling of power MOSFETs is provided.