Papers by Keyword: Isovalent Impurities

Abstract: The impact of Sn on the degradation of the nonequilibrium charge carriers lifetime (τ) and the change of free electrons concentration (n) in γ- or electron irradiated Czochralski (Cz) n-Si has been studied. It is shown that in some cases the low-resistivity Sn doped n-Si (n-Si:Sn) can be considered as a material with enhancement radiation tolerance. In this material the lifetime damage factor (k_τ) is in several times smaller compared to undoped n-Si while the conductivity damage factor (k_n) is close in both materials. We also compared the impact of Sn, Pb and Sn+Pb. It is found that the radiation damage of the carrier lifetime and the conductivity in n-Si:Pb is slightly smaller than in undoped n-Si and in n-Si:Sn+Pb is the same as in n-Si:Sn.