Papers by Keyword: LP-CVD

Abstract: 4H-SiC is a wide-bandgap semiconductor that has become essential for power electronics due to its large bandgap, high critical electric field, and excellent thermal stability. Within the {0001} basal orientation, the two polar surfaces – Si-face and C-face – exhibit distinct behaviours during chemical vapor deposition (CVD) homoepitaxy, with direct implications for device performance and manufacturing. In this work, n-type epitaxial layers were deposited on 150 mm, 4° off-axis Si-face and C-face substrates under identical conditions in a single-wafer hot-wall LP-CVD reactor (T > 1600 °C, P = 3.0 kPa, C/Si = 1.05, silane/propane/ethylene precursors, N₂ doping, HCl additive). Characterization analysis revealed pronounced polarity-dependent differences. AFM analysis showed that C-face epilayers exhibited smoother surfaces and reduced step bunching compared with Si-face layers. Optical and photoluminescence inspections show polarity-dependent defect propagation, with the C-face displaying reduced replication of extended defects under the explored conditions. However, nitrogen incorporation on the C-face orientation was more than 25× higher than Si-face orientation and displayed poor uniformity, highlighting the limited effectiveness of site-competition epitaxy on this orientation. In contrast, the Si-face provides tighter control of doping concentration and lateral uniformity, albeit with higher step bunching and rougher surfaces. These findings emphasize a fundamental trade-off in 4H-SiC homoepitaxy: the C-face offers morphological and structural advantages, while the Si-face ensures superior doping control and process stability. A deeper understanding of these polarity-dependent mechanisms is essential to optimize epitaxial growth strategies and to enable the design of high-performance SiC power devices.

Abstract: The increasing demand for WBG materials like SiC has led STMicroelectronics to expand wafer diameter from 150 mm to 200 mm, enhancing production yield and reducing costs. However, this expansion poses challenges in preserving crystalline quality. This investigation examines the impact of defects on 200 mm wafers, focusing on Total Usable Area (TUA) and electrical performance, particularly in wafers with polytype inclusions and high basal plane dislocation (BPD) density. Although the results for non-standard wafers show a significant reduction in TUA and an increase in electrical failures, the overall distribution of functional and non-functional devices remains stable, indicating process consistency.