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Articles by keyword: «LPCVD»

• A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p171)
• Advanced Processing Techniques for Silicon Carbide MEMS and NEMS
  Published in: Silicon Carbide and Related Materials 2003 (p1451)
• Carbonization Study of Different Silicon Orientations
  Published in: Silicon Carbide and Related Materials 2006 (p171)
• Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1103)
• CVD Growth Mechanism of 3C-SiC on Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p183)
• Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p305)
• Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p619)
• Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
  Published in: HeteroSiC & WASMPE 2011 (p61)
• Growth of 3C-SiC on Si: Influence of Process Pressure
  Published in: Silicon Carbide and Related Materials 2007 (p211)
• Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
  Published in: Silicon Carbide and Related Materials 2007 (p251)
• Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
  Published in: Silicon Carbide and Related Materials 2007 (p247)
• Hydrogen Influence of Thermally Induced Metastability in Amorphous Silicon
  Published in: Hydrogenated Amorphous Silicon (p695)
• Investigation on the LPCVD LTO Thin Film as a New Dielectric Layer for the Future ULSI Devices
  Published in: The Mechanical Behavior of Materials X (p1549)
• LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p145)
• Metal-Induced Crystallization of Polycrystalline Silicon by In-Situ Excimer Laser Annealing During Low-Pressure CVD Growth
  Published in: Progress in Advanced Materials and Processes (p43)