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Articles by keyword: «Lateral Growth»

• Characteristics Comparison between GaN Epilayers Grown on Patterned and Unpatterned Sapphire Substrate (0001)
  Published in: Advanced Materials and Processing IV (p355)
• Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
  Published in: Silicon Carbide and Related Materials - 1999 (p375)
• Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
  Published in: Silicon Carbide and Related Materials - 1999 (p103)
• Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p255)
• Growth and Evaluation of GaN Grown on Patterned Sapphire Substrates
  Published in: Advanced Materials and Processing IV (p351)
• Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
  Published in: Silicon Carbide and Related Materials 2010 (p111)
• Lateral Crystalline Grain Growth by Combination of Laser Irradiation with Rapid Substrate Heating
  Published in: Polycrystalline Semiconductors VII (p179)
• Lateral Enlargement of Silicon Carbide Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p39)
• Model of Lateral Growth Stage during Reactive Phase Formation
  Published in: Diffusion and Diffusional Phase Transformations in Alloys (p47)
• Pendeo-Epitaxy^TM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1491)
• Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
  Published in: Silicon Carbide and Related Materials 2003 (p79)
• Raman study of Epitaxial lateral Overgrowth of GaN on Patterned Sapphire Substrate
  Published in: Semiconductor Photonics: Nano-Structured Materials and Devices (p111)
• Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
  Published in: Polycrystalline Semiconductors VII (p213)
• Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle
  Published in: Polycrystalline Semiconductors VII (p355)