Papers by Keyword: Light Emitter

Abstract: We report a light emitter based on a 4H-SiC lateral Zener diode that is operated under reverse bias in the quantum tunneling regime. Wide bandwidth white light emission with a peak wavelength of 492 nm corresponding to the transition between the nitrogen donor state and the aluminum acceptor state and a full width half maximum breadth of 303 nm at room temperature is shown. The peak breadth can be attributed to the relative shift of the acceptor and donor levels in the high electric field within the space charge region under reverse bias. At the wavelength of 730 nm, which is commonly used for off-resonant excitation of silicon vacancy defects, the emitter achieves 43.1% of its peak intensity. The emitter shows no blue light peak corresponding to the transition between the donor level of nitrogen and the valence band at 391 nm, such as the LED spectrum under forward bias of the same diode does.

Abstract: We present a novel Ge on Si based LED with unstrained i-Ge active region. The device operates at room temperature and emits photons with energy of 0.8 eV. It basically resembles a p-i-n structure formed on a sub-micrometer thin Ge layer. The Ge layer has been grown on Si substrate by utilizing thin virtual buffer, so it becomes stress free but with high threading dislocation density. We show that such forward biased diode generates strong emission, caused by direct band to band transition in Ge. Using an InSb based detector we were able to analyze the emission spectrum in a broad energy range. We show that at low and moderate currents, features belonging to the direct and the indirect band to band electronic transitions are present which are characteristic for Ge. Clearly dominating is the direct transition related peak. Due to the missing stress-related red shift this peak appears close to the desired communication wave length of 1.55 μm. The dependence of radiation intensity on the excitation current follows a power low with exponent of 1.7, indicating that the recombination rate of the competitive nonradiative processes is relatively low. At high excitation currents features appear in the low energetic part of the spectrum. All results presented here are discussed in view of the outcome from measurements on Ge high quality bulk material. The role of the dislocation in the Ge films is discussed.

Abstract: This chapter serves as an introduction to the chapters on III-nitrides in this book. It gives a brief review of the development of relevant III-nitride materials for light emitters since the late 1960´s, when single crystalline GaN layers grown on sapphire were first demonstrated. The first wave of scientific work died out in the late 1970´s, since low-ohmic p-GaN could not be made at the time. After another 10 years several important breakthroughs were made, using the technology of metal organic vapor phase epitaxy (MOVPE). Smooth thin epilayers could be made, and ways to dope the materials n-type as well as p-type were invented. In the period 1986-1997 high brightness violet and blue double heterostructure (DH) LEDs, narrow quantum well (QW) LEDs, and QW based violet laser diodes with a long operating lifetime of 10000 hours were demonstrated, mainly by Japanese groups. Since then the development efforts have spread worldwide, and a large spectrum of novel applications based on nitride emitters are already in practical use. Perhaps the most important one is the future possibility of using nitride LEDs for general lighting purposes.