Papers by Keyword: Low Surface Roughness

Abstract: In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm).

Abstract: Diamond coatings on pure titanium substrates are of interest for tribological and biomedical implants. However, due to the different thermal expansion coefficients of the two materials, the complex nature of the interlayer formed during diamond deposition, and the difficulty in achieving very high nucleation density, it is hard to deposit adherent thin diamond layers on titanium. The aim of the present research was to successfully produce smooth and well adherent nanocrystalline diamond (NCD) film on a pure Ti substrate using the microwave plasma chemical vapor deposition (MWPCVD) method. The influence of Argon addition to CH4/H2 plasma on the crystallinity, morphology and growth of the diamond film deposited by MWPCVD was investigated using field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Xray diffraction (XRD) and Raman spectroscopy.