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Articles by keyword: «MOVPE»

• MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
  Published in: Semiconductor Photonics: Nano-Structured Materials and Devices (p218)
• A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
  Published in: Semiconductor Photonics: Nano-Structured Materials and Devices (p221)
• AlN and AlGaN by MOVPE for UV Light Emitting Devices
  Published in: Advances in Light Emitting Materials (p175)
• Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p159)
• Control of Defects in GaAs/GaInP Interface Grown by MOVPE
  Published in: Defects in Semiconductors 18 (p539)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• Dislocation and Strain Distributions in CdTe/GaAs (001) Epilayers
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p151)
• Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE
  Published in: Smart Materials (p825)
• Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p171)
• Electron Beam Pumped Room-Temerature Lasing of MOVPE-Grown ZnSe
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p323)
• Fabrication of a Peltier Device Based on InSb and SbTe Thin Films
  Published in: NEMS/MEMS Technology and Devices - ICMAT2011 (p50)
• Growth and Characterisation of Mg-Based Low Dimensional Systems for Blue-Green Optoelectronics
  Published in: Ultrafast Phenomena in Semiconductors 2001 (p43)
• Growth and Characterization of High Efficiency GaAlAs/GaAs/Ge Solar Cells
  Published in: Advances in Crystal Growth (p97)
• Growth of SiC on Si(100) by Low-Pressure MOVPE
  Published in: Silicon Carbide and Related Materials 2000 (p163)
• High Quality GaN on Si(111) using (AlN/GaN)_x Superlattice and Maskless ELO
  Published in: Silicon Carbide and Related Materials - 1999 (p1487)