Papers by Keyword: Magnetoresistivity MR

Abstract: Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B ║ c, J ║ ab) in electron-doped Nd2−xCexCuO4+δ single crystal films with x = 0.15 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of the back-flow of vortices owing to the pinning forces.

Abstract: We report on electronic transport in nearly magnetic conductors with strong structural disorder. The initial motivation for this work was a large positive magnetoresistance (MR) found in magnetically ordered ground state of (Y1-xGdx)Co2 alloys. This was a surprising result since a large positive MR is not expected in a system with strong static magnetic or structural disorder. Contemporary theory of magnetotransport and common sense agree that an external magnetic field should suppress magnetic fluctuations, resulting in a negative MR. On the contrary; a positive MR suggests that an external magnetic field enhances static magnetic disorder. It was shown that unusual MR of (Y1-xGdx)Co2 alloys is related to a combination of structural disorder and metamagnetic instability of itinerant Co-3d electrons. The new mechanism of MR is common of a broad class of materials featuring a static magnetic disorder and itinerant metamagnetism. Such systems display a number of unusual properties, among them strong pressure and magnetic field dependencies of resistivity and thermopower, Non-Fermi-Liquid (NFL) behavior of resistivity and, possibly, of thermopower. We review the relevant experimental data, mostly the properties of RCo2-based alloys, and discuss the theoretical model developed for the interpretation of the experimental results. This model includes new mechanism of magnetoresistivity in structurally disordered itinerant magnetic alloys.

Abstract: The possibility of obtaining a nanostructured composite in the Ni-Mg-O system by ion-beam sputtering has been investigated. The structural, magnetic and magnetoresistive properties of obtained samples have been investigated in a wide concentration range. The presence of the nanostructure in the obtained samples with Ni nanogranules (2-3 nm) has been confirmed by transmission electron microscopy. There is no observation of any magnetic or magnetoresistive properties at room temperature in the Nix(MgO)100-x composites. These properties were observed at 77 K. The obtained data mean that Curie temperature of the Ni nanogranules is lower then 298 K. This is due to small size of nickel granules and low value of exchange interaction energy in nickel.

Abstract: Two types of magnetoresistive effects can be observed in the multilayer structure of the ferromagnet/polydiphenylenephthalide/non-magnetic metal. One can see the effect of resistance switching in an external magnetic field and also the angular magnetoresistive dependence. The similarities and differences of these effects and other known magnetoresistive effects are considered. The conclusion is drawn that the peculiarities of the magnetoresistance in the ferromagnetic-polymer system are formed in the ferromagnet-polymer interface and the special features of charge injection into the conductive nanoscale channels of the polymer film have the determinative importance.

Abstract: The interlayer coupling in Co/Ge/Co trilayer films has been experimentally studied by the SQUID magnetometry and electron magnetic resonance. It has been found that the interlayer coupling is temperature-dependent. The values of the exchange constants have been determined.

Abstract: This paper is devoted to the investigation of crystalline structure, surface morphology, magnetic anisotropy, coercive force and domain structure of spin-valves with a single and double MgO barrier layers. It is shown that domain structure and magnetization reversal are the same for both systems, but otherwise the behavior of tunnel magnetoresistance is different. The approach to control magnetic anisotropy in soft magnetic layer using temperature annealing is demonstrated. It makes these structures possible for new applications in nanoelectronics.

Abstract: Magnetic properties, electrical resistivity and magnetoresistance of the Ni50Mn37(Sn1 xInx)13 (x=0.2, 0.5) Heusler alloys were studied in magnetic fields up to 360 kOe in the temperature range 4-400 K. It was found that the alloys exhibit a martensite phase transformation at a critical temperature TM240 K for x=0.2 and TM350 K for x=0.5. The TM temperature is lower than the Curie temperature of the austenite phase TCA in the alloy with x=0.2 and is higher than TCA in the alloy with x=0.5. The spontaneous martensite transformation in both alloys is accompanied by a large change (~48%) of the electrical resistivity. A large negative magnetoresistance (~45%) is observed for the alloy with x=0.2 upon the field-induced martensite transformation. The analysis of the obtained results allows us to conclude that the large magnetoresistance in the alloys is mainly due to the changes in the crystal structure and only slightly depends on the changes in the magnetic ordering.

Abstract: The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.

Abstract: As a new type of smart materials, magnetorheological elastomer (MRE) has become a hot current research focus. However, the piezoresistivity and magnetoresistivity of MRE have not been well studied. In this paper, this was done by using a test rig developed by the authors. The experimental results showed that the conductivity of the MRE responded sensitively to the applied pressure, and a linear relationship between the resistivity of the MRE and the applied pressure can be observed within a certain range. Besides, the sensitivity of piezoresistivity is different among different ratios of metal content, and it becomes more obvious when using the nickel content. And, the magnetoresistivity of MRE is not obvious in a range of low magnetic field intensity, and there is also no hysteresis phenomenon about magnetoresistivity.

Abstract: The effect of microstructure on transport properties of nano-polycrystalline La0.7Sr0.3MnO3-δ films, which were prepared by DC magnetron sputtering at various working pressures and followed by air annealing at 973K for 1h, has been investigated. The result indicates that the change of working pressure can change the microstructure, metal-insulator transition temperature (TIM) and peak resistance but does not change the transport mechanism for the films. The vacancy defects have an important effect on the transport properties of the films. Higher working pressure tends to decrease the density of vacancy defects. Low vacancy defects account for the high TIM and low resistance of the films. In the region of T > TIM, the charge carriers are moving in variable range hopping mode. The behavior of resistance decreasing with the increasing of temperature at low temperature (T<23K) can be explained on the basis of thermal excitation tunneling effect. The minimum resistance results from the combined effect of the tunneling effect and intrinsic metallic transport characteristic of the films.