Papers by Keyword: Magnetotransport

Abstract: The magnetoresistance of n-type conducting, paramagnetic Co-doped ZnO films prepared by pulsed laser deposition on sapphire substrates has been studied experimentally and theoretically. Positive magnetoresistance (MR) of 124% has been observed in the film with the lowest electron concentration of 8.3·10¹⁷ cm⁻³, while only a negative MR of −1.9% was observed in the film with an electron concentration of 9.9·10¹⁹ cm⁻³ at 5 K. The positive MR is attributed to the quantum correction on the conductivity due to the s-d exchange interaction induced spin splitting of the conduction band. The negative MR is attributed to the magnetic field suppressed weak localization [1]. Voltage control of the electron concentration in Schottky diodes revealed a drastic change of the magnetoresistance and demonstrated the electrically controllable magnetotransport behavior in Co-doped ZnO [2]. The magnetically controllable spin polarization in Co-doped ZnO has been demonstrated at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom electrode and Co as a top electrode [3]. There spin-polarized electrons were injected from Co-doped ZnO to a crystallized Al₂O₃ layer and tunnelled through an amorphous Al₂O₃ barrier. Our studies demonstrate the spin polarization and manipulation in Co-doped ZnO.

Abstract: In this article, we review our recent research on Fe3O4 epitaxial thin films and Fe3O4/MgO/Fe epitaxial heterostructures. More specifically, we report on the magnetotransport properties of Fe3O4 epitaxial films in a wide range of film thicknesses and temperatures, focusing on the anomalous, planar and ordinary Hall effects. We also summarize our insight on the origin of the enhanced magnetic moment found in ultra-thin magnetite films (thickness t < 5 nm). Finally, our work on the growth, and structural and magnetic characterization of heteroepitaxial Fe3O4/MgO/Fe trilayers is presented.

Abstract: We report on the experimental observation of large magnetoresistance in Alq3 organic light-emitting diodes (OLEDs). Very similar magnetic field effects (MFEs) of comparable magnitude are also observed in electroluminescence and photocurrent measurements. We also report on the frequency response of the magnetoresistance effect at frequencies below 100 kHz. To the best of our knowledge, the mechanism causing these MFE is currently not known.

Abstract: The magnetotransport properties of the electroplated and sputtered Bi thin films have been investigated in the range 4 – 300 K. A marked increase from 5,200 % to 80,000 % in the ordinary magnetoresistance (MR) for the electroplated Bi thin film was observed after thermal anneal at 4 K. The MR ratios for the as-grown and the annealed Bi thin films were found to exhibit 560 % and 590 %, respectively, at 300 K. On the other hand, the MR for the sputtered Bi film grown by sputtering was hardly observed at 4 and 300 K, whereas the MR ratios after anneal were found to reach 30,000 % at 4 K and 600 % at 300 K. We find that the room temperature MR in the sputtered films depends on the trigonal-axis oriented microstructures and grain size, in contrast to the electroplated films. Our results demonstrate the very large room temperature MR in the electroplated and sputtered Bi thin films, which can be used for spintronic device applications.