Papers by Keyword: Mg₂Si_0.8Ge_0.2

Abstract: By two-step solid state reaction, Mg2Si0.8Ge0.2 was successfully synthesized .The effect of Ag-doping concentration on the thermoelectric transport properties of p-type Mg2Si0.8Ge0.2 was investigated. With the increasing of Ag-doping concentration, the electrical conductivity σ and Seebeck coefficient α increase correspondingly over the measuring temperature range (300-800K).The peaks of the curves of Seebeck coefficient versus temperature shift towards the lower temperature .When the doping concentration of Ag is 16000ppm(nominal molar percent), the power factor P of Mg2Si0.8Ge0.2 reaches 4.4×10-4W/mK2 at 800K,obviously improved in comparison with the sample with no additive .