Papers by Keyword: Micropositioning Stage

Abstract: Based on piezoceramic stack actuators, a stage (dimension of 50mm×50mm×11mm) with a symmetric displacement magnifying mechanism is studied in this paper. FEM simulations are carried out to reveal the performance of the micropositioning stage and the amplification radio of the flexure hinge is 4.76. The working mode of the flexure hinge of the stage is also simulated by finite element method, and its natural frequency is 3291Hz. A series of tests about piezoceramic stack actuators have been done, including static, dynamic and temperature tests. The experimental results are identical to the theoretical analysis and give help to the application of piezoceramic stack actuators. It can also help the precise micropositioning stage driven by PZT to achieve higher positioning accuracy and resolution.

Abstract: One novel long-travel piezoelectric-driven linear micropositioning stage capable of moving in a stepping mode is developed. The stick-slip friction effect between flexure hinge actuation tips with a sliding stage is used to drive the stage step-by-step through an enlarged displacement of piezoelectric actuator. In order to enlarge the travel range, magnifying mechanism is optimally designed by use of flexure hinge and lever beam. Moreover, dynamic model of such stage is proposed by consideration of reset integrator stick-slip model. The simulation results show that the stage has considerable good dynamic properties.

Abstract: Along with the rapid development of semiconductor, photonics and ultra-precision engineering, ultra-precision positioning stages are becoming more necessary than ever. In this study, one novel XY micropositioning stage is proposed, in which bi-axis circular notch flexure and cantilever hinge mechanism are optimal designed as bearing to provide smooth and guided motion. The theoretical stiffness of stage is provided and verified by FEM analysis. Finally, the micro-positioning stage is built and its resolution is experimentally validated to be less than 4nm.