| Paper Title | Page |
|---|---|
|
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy Authors: T. Walther, Colin J. Humphreys, A.G. Cullis, D.J. Robbins |
505 |
|
Authors: Md. Arafat Hossain, Md. Rafiqul Islam |
456 |
|
Atomic Level Studies of Dislocation Networks in Niobium-Sapphire Interfaces Authors: A. Lévay, G. Möbus, V. Vitek, M. Rühle, Géza Tichy |
199 |
|
Authors: Xuemin Pan, Heino Sieber, Stephan Senz, D. Hesse, J. Heydenreich |
757 |
|
Atomic Structure of the Interface between Epitaxial Niobium Films and α-Al2O3 Substrates Authors: G. Gutekunst, J. Mayer, M. Rühle |
241 |
|
Cathodoluminescence Study of the Y0 Emission from ZnSe Films Authors: T. Mita, N. Yamamoto, T. Mitsui, S. Heun, A. Franciosi, J.M. Bonard |
89 |
|
Authors: S. Kaiser, Herbert Preis, Oliver Ambacher, W. Gebhardt |
1755 |
|
Compliance at the GaSb/GaP Interface by Misfit Dislocations Array Authors: Salim El Kazzi, Ludovic Desplanque, Christophe Coinon, Yi Wang, Pierrre Ruterana, Xavier Wallart |
85 |
|
Cracking of Misfit Dislocations in Thin Epitaxial Films Authors: A. Milchev |
527 |
|
Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers Authors: Xuan Zhang, Tetsuya Miyazawa, Hidekazu Tsuchida |
313 |