A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy

Authors: T. Walther, Colin J. Humphreys, A.G. Cullis, D.J. Robbins

A Theoretical Calculation of Misfit Dislocation and Strain Relaxation in Step-graded In_xGa _1-x N/GaN Layers

Authors: Md. Arafat Hossain, Md. Rafiqul Islam

Atomic Level Studies of Dislocation Networks in Niobium-Sapphire Interfaces

Authors: A. Lévay, G. Möbus, V. Vitek, M. Rühle, Géza Tichy

Atomic Resolution Electron Microscopy Studies of Reaction Fronts in Spinel-Forming Solid State Reactions

Authors: Xuemin Pan, Heino Sieber, Stephan Senz, D. Hesse, J. Heydenreich

Atomic Structure of the Interface between Epitaxial Niobium Films and α-Al₂O₃ Substrates

Authors: G. Gutekunst, J. Mayer, M. Rühle

Cathodoluminescence Study of the Y₀ Emission from ZnSe Films

Authors: T. Mita, N. Yamamoto, T. Mitsui, S. Heun, A. Franciosi, J.M. Bonard

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM

Authors: S. Kaiser, Herbert Preis, Oliver Ambacher, W. Gebhardt

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

Authors: Salim El Kazzi, Ludovic Desplanque, Christophe Coinon, Yi Wang, Pierrre Ruterana, Xavier Wallart

Cracking of Misfit Dislocations in Thin Epitaxial Films

Authors: A. Milchev

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Authors: Xuan Zhang, Tetsuya Miyazawa, Hidekazu Tsuchida