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Articles by keyword: «Molecular Beam Epitaxy (MBE)»

• In situ Photoemission Study on Initial Growth of Er₂O₃ Films on Si(001)
  Published in: Surface Engineering (p625)
• Blue Laser Diodes by Low Temperature Plasma Assisted MBE
  Published in: Perspectives of nanoscience and nanotechnology (p17)
• Correlation of Cathodoluminescence and EBIC Contrast in GaAs/Al_xGa_1-xAs Quantum Well Structures
  Published in: Beam Injection Assessment of Defects in Semiconductors (p473)
• Diffusion of Sb in Si_1-xGe_x-Alloy Layers
  Published in: Diffusion in Materials DIMAT 1996 (p1125)
• Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1177)
• Electrical Characterization of the AlN/Si(111) System
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1389)
• Fabrication of Dielectric/Conductive Hybrid Artificial Superlattices Using Molecular Beam Epitaxy Method
  Published in: Asian Ceramic Science for Electronics III and Electroceramics in Japan XII (p139)
• Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p247)
• Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p239)
• Interplay between Planar Defects and Threading Dislocations in GaAs-on-Si
  Published in: Intergranular and Interphase Boundaries in Materials (p317)
• Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1217)
• Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p259)
• The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si
  Published in: Silicon Carbide and Related Materials - 1999 (p289)