Papers by Keyword: Multi-Zone JTE

Abstract: The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexity, cycle time, and cost, a single photolithography and single implant MJTE technique has been successfully developed. The method utilizes a pattern of finely graduated oxide windows that filter the implant dose and create a graded MJTE in a single implant and single photolithography step. Based on this technique, 6 kV / 0.09 cm2 PiN diodes were fabricated utilizing a 120-zone single-implant JTE design. This novel single-implant MJTE design captures 93% of the ideal breakdown voltage and has comparable performance and yield to a baseline three implant process.

Abstract: Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.