Papers by Keyword: Optical Properties of Thin Films

Abstract: Tin oxide (SnO₂) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO₂: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO₂ with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO₂: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO₂: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

Abstract: Ellipsometry is power instrument for testing several properties of thin films. Advantage and attractiveness of these optical studies consist in that they are non-destructive and non-disturbing. High sensitivity to surface state allows us to monitoring properties of films beginning from atomic scale as in-situ and as ex situ. Ellipsometry give us information about film thickness, and film composition, and its surface morphology. From analysis of ellipsometric spectra it is possible get data about zone structure of semiconductor materials, such as energy of critical points, absorption edge location, and crystallinity. Speed of data acquisition is sufficient high to test dynamic of film growth. Ellipsometric measurements are quite simple but its interpretation requires special software. In this paper some possibilities of ellipsometric method are demonstrated in examples film polymorphism.

Abstract: Optical properties of thin films of vanadium thermally oxidized at air were studied by ellipsometric method using wavelength of He-Ne laser. Multipart composition of these films was revealed and method of optimization of technological conditions based on dynamic of changing optical constants near 68°C was developed.

Abstract: A variety of electrochemical and electrical techniques is employed in order to determine useful parameters of the optical behaviour of thin semiconducting films. In particular, this work is intended to the characterization of cathodically electrodeposited binary and ternary cadmium and zinc selenides and tellurides by photoelectrochemical (PEC) tests. Typical solid-state techniques, such as reflection, laser assisted photoreflection, resistivity and Hall effect measurements are used as well. A plain relation between crystal structure/film morphology and PEC behavior is established so long as the electrochemical preparation method is capable to explicitly control the deposit structure. In certain cases, a particular charge transfer mechanism in the semiconductor, associated with the existence of a nanostructure, is shown to result in higher photoconversion efficiencies as compared to larger-grained films.