Papers by Keyword: Optoelectronic Device

Abstract: In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with different pore depth were designed and simulated to investigate the effect of pore depth on the optical and electrical properties of GaAs semiconductor. The pore depth of porous GaAs structure was varied with 2, 4, 6 and 8 μm. The porous GaAs structures were then tested for the metal-semiconductor-metal (MSM) photodetector device application. The non-porous and porous GaAs MSM photodetectors were compared systematically through current-voltage (I-V) characteristics, current gain, and spectral response. The result showed that the porous GaAs MSM photodetector has better performance in terms of electrical and optical properties than the non-porous photodetector. Amongst the MSM GaAs photodetectors, the porous GaAs photodetector with pore depth of 6 μm obtained the highest current gain value of 3.22. While for optical properties, the spectral response showed the current intensity of 11.370 µA which was recorded at the peak wavelength of 880 nm. Therefore, porous GaAs showed good potential and can be used for optoelectronic device applications such as MSM photodetector.

Abstract: The solvent-based exfoliation of graphite, including into graphene and/or graphene-like platelets, is an important challenge. Here, we report a “direct” Friedel-Crafts acylation reaction between graphite and 4-ethylbenzoic acid (EBA) to afford edge-functionalized graphite (EFG). Unlike, for example, graphite oxide (GO), the functionalization is at the edges of the graphite and thus, the basal plane of individual layers in EFG is not functionalized. The EFG can be easily dispersed and exfoliated in common organic solvents to concentrations as high as 0.8 mg/mL. Large-are uniform films can be produced by solution-casting such dispersions on substrates and conductivities as high as 125 S/cm can be obtained by subsequent heat treatment at 900 °C under argon atmosphere. Hence, a few layers graphene obtained from annealing under argon atmosphere show the potential to replace Indium tin oxide (ITO).

Abstract: Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both electronics and optoelectronics. In this chapter we present an overview of recent applications on light emission from SOI materials. Particularly, in our work we used SOI technology to fabricate light emitting diodes (LEDs), which emit around 1130 nm wavelength with an external quantum efficiency of 1.4 × 10−4 at room temperature (corresponding to an internal quantum efficiency close to 1 %). This is almost two orders of magnitude higher than reported earlier for SOI LEDs. This large improvement is due to three carrier confinement mechanisms: geometrical effects, quantum-size effects, and electric field effects. Our lateral p+/p/n+ structure is powered through two very thin silicon slabs adjacent to the p+/p and n+/p junction. Such use of thin silicon films aims to reduce the p+ and n+ contact area and to confine the injected carriers in the central lowly doped p-region. With this approach, we realized an efficient compact infrared light source with high potential switching speed for on-chip integration applications.