Papers by Keyword: Oxide Thin Films

Abstract: Cu and Ni from CuNi metallic targets (composition 20-80 and 46-54 at.%) are deposited on Corning glass, quartz and the native oxide of Si (100) wafers by direct current magnetron sputtering in a high vacuum chamber (base pressure 5 x 10^-5 mbar). The CuNi films, with thickness 40 200 nm, are post annealed at temperatures 400 - 500 °C in a furnace under atmospheric air in order to be fully oxidized. The structure of the films is studied by x-ray diffraction experiments. Phase separation of the oxides is evident. The optical properties are studied via ultraviolet-visible light absorption spectroscopy. The spectra of CuNi-oxide films are compared with the spectra of the pure CuO and NiO films. Features originating from both CuO and NiO are detected in the spectra of the CuNi-oxide thin films.

Abstract: Thin Cu films of thickness 0.4 – 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230oC and 425oC in order to produce single-phase Cu2O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet – visible spectrophotometer. From the absorption spectra of the films, it was found that the gap EB for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu2O thinnest film (0.75 nm), whereas the Edirect for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 nm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.

Abstract: We report the fabrication of the orientation preferred structures in BaTiO3 thin films on Ni substrates using pulsed laser deposition. Transmission electron microscopy studies showed that the films consist of crystalline structures of tetragonal BaTiO3. More than 60% of BaTiO3 grains in the films exhibit nearly the same crystallographic orientation with their a-axis lying in the film plane and the [011] direction parallel to the growth direction. Such orientation preferred structures were grown on a Ni nanocrystalline buffer layer. This result demonstrated the possibility of approximating an oriented single crystalline ceramic oxide structures on metallic substrates.

Abstract: We have investigated the exchange bias in CVD grown epitaxial CrO2/Cr2O3 bilayer thin films using hysteresis loops and resonant RF transverse susceptibility. M-H loops indicated an enhanced coercivity without appreciable loop shift and the transverse susceptibility in CrO2/Cr2O3 bilayers revealed features associated with both the ferromagnetic and antiferromagnetic phases. In addition, TS yielded large anisotropy constant (Keff) values depending on the fraction of Cr2O3 present. The large anisotropy fields observed cannot be accounted for by the variable thickness of CrO2 alone and are indicative of possible exchange coupling between CrO2 and Cr2O3 phases that significantly affects the effective magnetic anisotropy.