Papers by Keyword: Photoelectron Spectroscopy

Abstract: The electronic structure of ultrathin Na/GaN interfaces was studied using photoelectron spectroscopy with synchrotron radiation in the photon energy range of 75–770 eV. The experiments were carried out in situ in ultrahigh vacuum of 5·10^–10 Torr with submonolayer sodium coverages on the gallium nitride surface. The photoemission spectra of the Ga 3d and N 1s core levels were studied at different excitation energies. It was found that Na adsorption causes a decrease in the intensity and a shift in the spectra of the Ga 3d and N 1s core levels towards higher binding energies. It was found that the sodium adsorption leads to some changes in the spectra due to charge transfer between the Na adlayer and the surface Ga or N atoms.

Abstract: The surface characterization of MgO thin films was investigated by using surface analysis instruments such as X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS) and ultra-violet photoelectron spectroscopy (UPS). The MgO thin films was prepared on Si substrates by using electron beam evaporation deposited at room temperature (RT) and 300 °C in air. The XPS was used to investigate the effect substrate temperature on the chemical state in the thin films surface. The O1s spectra was showed that the hydrate MgO, Mg(OH)2, was detected in the surface of film at RT and it was decreasing at substrate temperature of 300 °C in air. The band gap obtained for MgO thin films using primary energy of 1500 eV were 6.57 and 7.41 eV for film deposited at RT and 300 °C in air, respectively. The work function of MgO thin films were 4.16 and 4.60 eV for films deposited at RT and 300 °C in air, respectively. Our results suggested that the electronic properties can be improved by the heating treatment during deposition.

Abstract: Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

Abstract: We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar⁺ ions at a dose of 4.5 × 10¹⁵ cm² in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.

Abstract: The fundamental aspects of thermal oxidation and oxide interface grown on 4H-SiC(0001) Si-face and (000-1) C-face substrates were investigated by means of high-resolution x-ray photoelectron spectroscopy (XPS) using synchrotron radiation together with electrical measurements of SiC-MOS capacitors. We found that, for both cases, there existed no distinct C-rich transition layer despite the literature. In contrast, atomic scale roughness causing degradation of SiC-MOS devices, such as negative fixed charge and electrical defects just at the oxide interface, was found to be introduced as thermal oxidation progressed, especially for the (000-1) C-face substrate.

Abstract: The (100) surface of Ni2MnGa ferromagnetic shape memory alloy exhibits intrinsic surface property dissimilar to the bulk as well as influence of compositional variation at the surface. It is shown that by sputtering at room temperature and annealing at high temperature, it is possible to obtain a clean, ordered and stoichiometric surface. However, for even higher annealing temperatures, the surface becomes Mn rich. The (100) surface of Ni2MnGa is found to have Mn–Ga termination. A surface reconstruction to p4gm symmetry is observed in the austenite phase, while the expected bulk truncated symmetry at surface is p4mm. For the stoichiometric surface, the XPS valence band is compared with our calculations based on first principles density functional theory and good agreement is obtained. The ultraviolet photoelectron spectroscopy (UPS) valence band spectra depend sensitively on composition varying from Ni rich to Mn rich surfaces. A satellite feature observed in both Ni 2p core-level and valence band spectra is related to the narrow 3d valence band in Ni2MnGa.

Abstract: We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of ÁSi b,n = 0.3±0.1 eV and ÁSi b,p = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H- SiC(0001) we find ÁC b,n = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

Abstract: Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6√3 reconstructed layer.

Abstract: Surface science methods including scanning Auger microscopy (SAM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy have been used to study the initial growth of chromate conversion coatings on aluminum 2024-T3 alloy, using a coating bath formed by dissolving CrO3, Na2Cr2O7 and NaF in water. The objective is to learn more about growth mechanism on the different microstructural regions of this alloy surface, including the second-phase particles and the alloy matrix.

Abstract: The present work is part of a broader investigation of the effects of additives in zinc phosphate (ZPO) coating solutions that are designed for specific applications to Al and its alloys. ZPO conversion coatings improve the corrosion resistance of the Al substrate and increase the adhesion of paint. Coatings formed on 2024-T3 aluminum alloy, after dipping in ZPO coating baths containing Mn2+, have been studied by X-ray photoelectron spectroscopy (XPS), SEM, and scanning Auger microscopy (SAM). Variations are observed in coating morphology and composition as the amount of Mn2+ in the coating solution increases through the 0 to 2500 ppm range. Adhesion tests give information on the relative strength of the coating-substrate interaction at different microstructural areas.