Papers by Keyword: Physical Cleaning

Abstract: The removal of particle contamination is key to maximize yield. Some common particle removal techniques are not relevant anymore when complex and fragile structures are present on the surface. This led to the development of new cleaning processes based on innovative concepts to improve particle removal efficiency without any pattern damage. Some of these processes rely on a resist film lift off. One of these particle removal processes is studied in this paper. The process consists in some resist spin-coating followed by a diluted ammonia dispense to remove this film, which results in particle removal. This specific resist film is made of two immiscible organic polymers. A study was conducted to understand how the organization of these two polymers in the film is key for the film lift-off and the cleaning efficiency. This organization was shown to depend on the substrate contact angle and the resist formulation. A surface preparation is required on hydrophobic surface to reduce their water contact angle and ensure the efficiency of the process. As a result, compared to a high velocity aerosol cleaning technique, this resist peeling process requires multiple steps and a significant process time. A Particle Removal Efficiency study was then performed on blanket wafers to determine and understand how the different process parameters impacted on the cleaning efficiency. It led to the optimization of this process efficiency on blanket wafers. A comparison between an optimized process and a high velocity aerosol cleaning technique underlined the potential of such a process. Compared to high velocity aerosol cleaning, it demonstrated higher efficiency on blanket wafers, without causing any pattern damage on patterned wafers. These results lead to promising perspectives for using this process in the cleaning of fragile structure or targeting small particles with high adhesion.

Abstract: Wet cleaning has become challenging as the feature size of semiconductor devices decreased to sub-5 nm nodes. One of the key challenges is removing various types and sizes of particles and contamination from complex and fragile 3D structures without pattern damage and film loss. Conventional physical cleaning methods, such as dual-fluid spray or megasonic cleaning, are being used for the particle removal process. However, in advanced device nodes, these methods induce pattern damage and film loss. In this paper, we describe a novel particle removal technology called Nanolift which uses a polymer film consisting of two organic resins with different functions and achieved high particle removal efficiency on various types and sizes of particles with no pattern damage and minimum film loss.

Abstract: In semiconductor device manufacturing, single wafer processors are widely used in not only BEOL process but also in FEOL process for 2X devices to improve the cleaning efficiency and get the higher productivity. Because the scaled down devices require the minimum substrate loss in the cleaning steps, the physical force by a dual fluid spray is still the main position to improve the cleaning efficiency at the moment comparing with chemical effects as the dissolution of contaminants and/or the lift off of particles. Sato, et al., reported that the relationship between particle removal and droplet characteristics linked to the droplet energy density E_d as following equation [. The kinetic energy E_k of droplet is calculated from droplet diameter d and velocity v, as shown in Equation 1.

Abstract: Removal of particulate residues represents a very challenging step in current CMOS-technology nodes. The continued miniaturization and the introduction of novel materials in the semiconductor industry have resulted in very stringent requirements for device fabrication steps such as cleaning processes [. Physical forces, acting directly on the surface to be cleaned, are currently employed for delicate particle removal as an alternative to more aggressive chemistries [2]. High frequency ultrasounds (500 kHz 4 MHz), or megasonics, rely on the action of oscillating bubbles created during the ultrasonic agitation of the cleaning liquid. Strongly oscillating gas bubbles are able to generate shear forces, which are considered to be responsible for cleaning [3]. However, collapsing bubbles close to a surface can also produce water jets and shockwaves which lead to damage of fragile structures. Fundamental research is needed in order to overcome these issues by improving the understanding of the physical parameters playing a role in the acoustic cavitation of bubbles. This study reports the effects of lowering the surface tension of the liquid bulk on the bubble activity in the MHz range. A lower surface tension (45 mN/m) with respect to water (72 mN/m) is obtained by adding a non-ionic surface-active agent (TritonX-100). After fully characterizing its wettability, a cleaning solution containing surfactant is investigated under pulsed and continuous acoustic fields, for different acoustic amplitudes and gas concentrations. The aim is to increase bubble activity while reducing the strength of the bubble collapse. The results obtained can be useful in tuning megasonic cleaning systems towards more efficient processes.

Abstract: A novel advanced spray technology, in which droplet size and velocity are accurately and tightly controlled, has been developed to realize the damage-free cleaning for next generation device manufacturing. The influence of droplet characteristics on pattern collapse/damage was quantitatively investigated using this technology. It was shown that the amount of damage was correlated to the droplet energy density on the wafer. The mechanism of pattern damage generated by the conventional dual fluid spray was revealed by the damage threshold curve, which was obtained from the theoretical consideration. Finally higher particle removal efficiency without any pattern damage was achieved by controlling the distribution of effective droplets for cleaning.

Abstract: We have been developing an innovative ultra-low environmental load cleaning technique by the use of steam-water mixed spray. We showed that this technique is quite effective in both cleaning and photo-resist stripping. We also found that the physical force associated with steam-water mixed spray is greater than that with air-water mixed spray; hence we proposed that the condensation plays an important role in this cleaning technique. In order to discuss further this mechanism, we perform the order estimation of physical processes in dynamics of liquid droplet moving in vapor flow impacting on a solid interface in this study. Results show that droplet impact velocity can be reduced while the droplet approaches to the solid surface. However, the vapor in the gap can condensate to either the liquid droplet or the solid surface with the velocity whose order of magnitude cannot be negligible compared to the impact velocity; hence the amount of vapor that should be pushed out from gap can be drastically reduced, This condensation results in the significant reduction of viscous force. This reduction of force with the existence of condensation reduces the impact velocity deceleration. Consequently significantly large impact pressure is generated.

Abstract: Physical cleaning uses the physical force for particle removing process and the physical force can be represented by PRE(%) and pattern damage. Using the damage proving pattern, which was composed with conductive material for electrical detection, the damage of physical cleaning was quantitatively analyzed. And pattern damage was calculated with a form of damage density and plotted with pattern CD. Using PRE(%) and three parameters, which were derived in the damage density plot, the comparison of various physical cleaning was performed..

Abstract: Four different types of FINs; amorphous Si (a-Si), annealed a-Si, polycrystalline Si (poly-Si) and crystalline Si (c-Si) were used to investigate the effect of interfacial strength and the length of structures on the physical cleaning window by measuring their collapse forces by atomic force microscope (AFM). A transmission electron microscope (TEM) and a nanoneedle with a nanomanipulator in a scanning electron microscope (SEM) were employed in order to explain the different collapse behavior and their forces. Different fracture shapes and collapse forces of FINs could explain the influence of the interfacial strength on the pattern strength. Furthermore, the different lengths of a-Si FINs were prepared and their collapse forces were measured and the shorter length reduced their pattern strength. Strong adhesion at the interface resulted in a wider process window while smaller dimensions made the process window narrower.

Abstract: A non uniform sound field distribution can be a problem in a megasonic cleaning system, since a higher sound intensity can cause damage, while areas exposed to a lower intensity will be insufficiently cleaned. These non uniformities can be the result of sound field reflection, leading to standing waves, and the interference related to the near field. In a single wafer tool with a transducer facing the wafer a small height difference will have a large impact on the cleaning efficiency if standing waves are present. Here we study the impact of the wafer transducer height in a cleaning system using a megasonic nozzle above a rotating wafer.