Papers by Keyword: Polish Damage

Abstract: Electron beam induced current (EBIC) observations have been carried out to investigate the influence of mechanical polishing (MP) direction on the dislocations formation at the Si-face c(0001) of 4H-SiC epitaxial layers. Two opposite MP directions (defined by polish pad moving direction) have been compared, which are [11-20] off-cut directions along step-up and step-down, respectively. It has been found that high density of dislocations have been formed along the polish paths for the 8o off samples with polishing pad moved in step-up direction. By contrast, step-down polishing samples have shown no significant dislocation increase although shallow polish scratches were observed. Similar experiments have also been carried out for 4o off samples, showing step-up MPs introduced more dislocations than step-down ones. The results are discussed in terms of forces along the slip plane [11-20](0001) effectively exerted by the abrasive particles on the steps.