Papers by Keyword: Polishing Slurry

Abstract: Stainless steel will become one of the main substrate materials for flexible large-scale displays. As the substrate of the flexible displays, the biggest problem of stainless steel is that the surface roughness is too large. It is necessary to polish the surface of stainless steel with ultra-precision. Chemical mechanical polishing (CMP) technology will be one of the most practical processing technologies to make the surface of stainless steel ultra-smooth and damage-free. In this paper, the material removal rate (MRR) and surface roughness were studied based on the hydrogen peroxide oxidant and ferric chloride oxidant with different surfactants in chemical mechanical polishing (CMP) slurry by experiments. The results show that it can obtain the maximum of the MRR and the optimal surface quality when using 0.04 wt% sodium hexadecyl sulfate as the surfactant of the hydrogen peroxide-oxalic acid based polishing slurry and when using 0.2 wt% nonylphenol ethoxylate or 0.8 wt% OP-10 emulsifier as the surfactant of the of ferric chloride-oxalic acid based polishing slurry. The results of this study can provide a reference for further research on the chemical mechanical polishing of stainless steel.

Abstract: The ultra-thin stainless steel sheet will be used in flexible displays for substrate material. The application of the substrate requires its surface very smooth, no defects and damage free. Chemical mechanical polishing (CMP) has been considered as a practical and irreplaceable planarization technology in the ultra precision machining of the flexible display substrate. In chemical mechanical polishing of ultra-thin stainless steel, the oxidant of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al₂O₃) abrasive. The research results show that the oxidant of the hydrogen peroxide and the oxalic acid have the interaction in CMP 304 stainless steel and when using the only one oxidant in polishing slurry, the hydrogen peroxide or oxalic acid, the MRR is less than the maximum. The oxalic acid can provide a strong acidic environment to ensure the stability of the hydrogen peroxide in polishing slurry and to improve the MRR in CMP 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Abstract: Stainless steel will become one of the substrate materials used in flexible display. In this paper, the influence of the ferric chloride and the oxalic acid on the material removal rate (MRR) and surface roughness had been studied in the chemical mechanical polishing (CMP) 304 stainless steel. By analysis and research, the slurry ingredients based on the type of ferric chloride and oxalic acid had been obtained. The experimental results show that, the material removal rate reached more than 200nm/min. By the qualitative analysis on the phases of the surface material of 304 stainless steel using X-ray diffraction (XRD) after CMP, it is proved that the ferric chloride based slurry did not change the original phases and did not affect the performance of 304 stainless steel. The research results of this paper can provide the reference for the study the CMP slurry of 304 stainless steel.

Abstract: The ultra-thin 304 stainless steel sheet will be used in flexible displays for substrate material. In chemical mechanical polishing of ultra-thin stainless steel, the pH value of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of pH regulator in slurry on MRR had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al₂O₃) abrasive in acidic polishing slurry. The research results show that, in the same conditions, different pH value had a different chemical action mechanism and a different MRR. And also, different oxidant with pH regulator had a different chemical action mechanism and a different MRR. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Abstract: Flexible displays will become the mainstream display of next generation, so the manufacturing technology of the flexible display substrate is one of very important technologies. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina abrasive had been done in CMP ultra-thin stainless steel surface by a lot of tests. The CMP slurry based on alumina abrasive for ultra-thin stainless steel surface had been obtained. According to the test results, the material removal rate (MRR) is about 177 nm/min and the surface roughness (Ra) is about 0.018μm.

Abstract: In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al₂O₃) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Abstract: SiC crystal substrate has been widely applied in the field of semiconductor industry and optical components recently,such as IC and semiconductor lighting. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina (Al₂O₃) abrasive had been done in CMP SiC crystal substrate (0001) Si surface by a lot of tests. A CMP slurry based on alumina (Al₂O₃) abrasive for SiC crystal substrate (0001) Si surface had been obtained. According to the CMP test results, the material removal rate (MRR) is about 3 nm/min and the surface roughness Ra is about 0.198μm.

Abstract: Several chelating agents in silicon polishing slurries were studied about their effects on copper adhesion to the surface of silicon wafer. The copper contamination level on the Si wafer surface was measured with GFAAS. The results indicate that PAA and HEDP for acid slurries can reduce 80% copper contamination with respect to the situation of without chelating agent. EDTA, the most common chelating agent for alkaline slurries, has no predominant compared with FA/O and AEEA. The copper contamination on Si wafer surface can reduce nearly 50% by adding EDTA while the addition of FA/O or AEEA in the same concentration for alkaline slurries can reach more than 70% reduction of copper contamination level.

Abstract: SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.

Abstract: A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).