Papers by Keyword: Polyphenylcarbosilane

Abstract: Polyphenylcarbosilane (PPCS) was synthesized from thermal rearrangement of the polymethylphenylsilane around 350 ~ 430°C. Characterization of synthesized PPCS was performed with FT-IR spectroscopy analysis. From FT-IR data, the band at 1035cm^-1 is very strong and assigned to CH₂ bending vibration in Si-CH₂-Si group, indicating the formation of the PPCS. Ceramic thin film was fabricated onto stainless substrate by dip coating using a 20wt% PPCS in toluene. Heat treatment of the samples was performed at various temperatures (600°C and 800°C) under nitrogen atmospheres. The prepared PPCS samples and the coating layers on SUS316 after heat treatment were analyzed using FT-IR and XPS, respectively.

Abstract: In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.