Papers by Keyword: Pop-In

Abstract: Three-dimensional molecular dynamics (3D MD) simulation was carried out to investigate the deformation of single crystal gallium arsenide (GaAs) during nanoindentation. Tersoff potential was used to simulate the atomistic interaction under an extremely low load of indentation. The coordination number and atomic displacement were studied and the cross-sectional profiles of the simulated indent were examined. The simulation results revealed that the lattice deformation of GaAs was influenced by polarity, showing distinct patterns on different crystalline planes. Slip band and dislocation were found to be the dominant deformation phenomena.

Abstract: Sapphire single crystal is widely used in many fields because of its excellent properties, as a focus of mechanical test, nanoindentation on sapphire is paid a great deal of attention by researchers. In this manuscript, the maximum load, depth and loading rate effects on the first pop-in event during nanoindentation of sapphire single crystal were discussed, the results indicated that these factors had no effect on the load at which the first pop-in occurred and the extension width of pop-in; the deformation below the first pop-in event was discussed and it could be roughly considered as purely elastic deformation through analyzing.

Abstract: This paper investigates the mechanical properties of potassium dihydrogen phosphate (KDP) crystals with the aid of nanoindentation using a conical diamond indenter. It was found that when unloading is after the first pop-in, the common method of obtaining elastic modulus from the unloading curve of nanoindentation is no longer applicable, because the unloading is inelastic. The study revealed that the pop-in could be due to dislocation nucleation and propagation, and that the first pop-in occurs under a stress below that of the major dislocation burst. Hence, the macroscopic yielding point, which is usually regarded as the onset of plasticity of a material, is nanoscopically not a critical point of the first dislocation in KDP. The study found that the elastic modulus of KDP indenting on its (001) plane is 52.8±3.8GPa. The hardness of the material is 1.89±0.05GPa.

Abstract: The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.