Papers by Keyword: Protrusions

Abstract: We present three different ways of transferring 3C-SiC layers grown on silicon on top of a SiC carrier using a carbon glue layer. Our main focus was upon the growth on the transition layer, as 3C-SiC does not feature any polarities in the <100> or <-100> direction. We realized a stable and reproducible process by following a wet chemical approach, dealing with the difficulties of handling thin but freestanding 3C-SiC layers. By using this way, we transferred approximately 130 μm thick pieces using their horizontal hot-wall reactor (M10), which were chemo mechanically polished and afterwards fixed on our SiC carriers. Implementing such a seeding stack into our growth setup, we managed to grow between 20 μm and 130 μm thick layers on top. We have proven the possibility to grow on the transition layer. Furthermore, we observed a slight reduction in protrusion density, which is currently one of the main defects in such layers.

Abstract: Effects of local variations in the deformation microstructure on subsequent recrystallization are discussed and illustrated by three examples. The three examples consider local variations on different length scales and are: 1. Effects of local variations in the deformation microstructure on the formation of protrusions on migrating boundaries. 2. Effects of an inhomogeneous spatial distribution of second phase particles on growth. 3. Effects of stored energy and orientation variations on recrystallization kinetics.

Abstract: The detailed microstructure in front of recrystallization boundaries and their migration during annealing were traced using ex-situ electron backscatter pattern maps of one and the same surface area taken after annealing. It is observed that many protrusions/detrusions form on the recrystallizing boundaries. During annealing, the recrystallization boundary segments migrate in a stop-go type of fashion, while protrusions and detrusions alternately form and disappear. The correlation between the protrusions/detrusions and the stop-go type of migration are briefly discussed.

Abstract: Effects of the crystallographic misorientation across boundaries between recrystallising grains and the neighbouring deformed matrices are discussed and exemplified by recrystallisation investigations of fcc metals. Classic misorientation observations are reviewed in the introduction, whereas the main parts of the paper focuses on two special boundary migration phenomena observed by in-situ recrystallisation experiments; namely protrusions and facets.