Papers by Keyword: RESET

Abstract: Which parameter dominantly decides the value of time required to reset ReRAM (t_reset) among possible parameters, the value of a low resistance (R_L), voltage to induce reset (V_reset), and temperature to induce reset (T_reset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted t_reset, V_reset, R_L and T_reset at the same time by combining two electrical measurements. As a result, we found a clear correlation between V_reset, R_L, and T_reset, meaning that each parameter can not be controlled independently. T_reset increases not only with increasing V_reset but also with increasing R_L, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

Abstract: With the rapid development of high-rise buildings in our country, the seismic design of structures is becoming more and more important. And the seismic performance of traditional seismic system is not perfect, there are still some room for improvement. This article points out the advantages of the human body vertebra seismic system by comparing the characteristics of the current building aseismic system with the deep analysis of the human body vertebra seismic system and the application of the seismic characteristics of the human body vertebra in seismic design of building structure application foreground is prospected.

Abstract: Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

Abstract: In this paper, a real-time location and reset method of cylindrical FPSO is presented based on GPS. In this method, the coordinate system of PFSO is determined by three GPS locators installed on the platform. Then, through coordinate transformation according to the marine engineering coordinate system established before, we can get the displacement and the orientation of FPSO, so as to achieve its real-time location. Finally, this displacement and orientation information is assigned to relative thrusters, which are evenly distributed with an angle 22.5°on both sides of the “+” and “-” X and Y axis, according to the calculating results of the optimization model.

Abstract: Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80~1.00
). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.