Papers by Keyword: Ridge Waveguide

Abstract: This paper will present a novel wide-band double-ridged standard horn antenna at 0.5~6GHz with the software named Ansoft HFSS, which is mainly used for far-field antenna measurement system. A simulation model of wide-band double-ridged horn antenna and the detailed design of each part of the structure will be given. With optimization in HFSS, the results show that the VSWR in the whole frequency band is below 2.4 and average gain larger than 6 dB. Finally, results of the measurement for VSWR, gain and radiation pattern are presented and discussed, which indicates that the built prototype is consistent with the design goals very well.

Abstract: BaTiO₃ crystal film has the very high electro-optic effect, so it has important research value for thin film waveguide electro-optic modulators. In this work, BPM software is used to simulate the single-mode condition of ridge waveguide at first, then BaTiO₃ film waveguide structure is designed with suitable film thickness.BaTiO₃ waveguide thin films are grown by pulsed laser deposition on single crystal MgO substrate. The BaTiO₃ thin-film crystalline structures grown at different temperature sand different laser powers were analyzed by using X ray diffraction , which showed the BaTiO₃ films have a priority crystallization direction and good crystallization quality at 750°C grown temperature. For the optimally-designed waveguide structures, the PECVD technique and ICP plasma etching method are employed to coat and etch Si₃N₄ films, respectively. Through the optimization of main process parameters, 60 sccm reaction gas flow and 150 nm/min etching speed are finally selected to create the ridge waveguides, and consequently, the surface roughness of Si₃N₄ film waveguide reaches 2.3 nm.

Abstract: One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.