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Papers by Keyword: Rutherford Backscattering Spectroscopy

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Microstructural Study of Fe-Implanted SiC: Comparison of Different Post-Implantation Treatments

Authors: Alain Declémy, Cyril Dupeyrat, Lionel Thomé, Aurelien Debelle

Abstract: Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).

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Characterization of Cu/Al₂O₃ Interfaces after Heavy Ion Irradiation

Authors: K. Neubeck, M. Rodewald, R. Riemenschneider, D.M. Rück, H. Baumann, Horst Hahn, Adam G. Balogh

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Radiation Defects Studies on Ar-Implanted Hg_1-xCd_xTe

Authors: M.H. Aguirre, H.R. Cánepa, N.E. Walsöe de Reca