Papers by Keyword: Scattering Mechanism

Abstract: The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.

Abstract: Thermoelectric and galvanomagnetic properties for solid solution based on bismuth and antimony chalcogenides were studied for the optimal compositions and carrier concentrations in the temperature interval 100-240 K. Galvanomagnetic properties were analyzed in the framework of the many–valley energy spectrum model with isotropic and anisotropic scattering of charge carries. The figure-of-merit is shown to be determined with optimal relations between the values of the density-of-states effective mass, the carrier mobility taking into account degeneration of charge carriers, and the lattice thermal conductivity. The figure-of-merit also depends on anisotropy of the constant energy surface and scattering mechanism. Average values of the figure-of-merit through the temperature interval 100-240 K are equal to (2.5-2.65) 10-3 K1 for optimal compositions and carrier concentrations.