Papers by Keyword: Semiconductor Material

Abstract: Traditional silicon-based photodetectors are limited by the band gap of silicon, which results in a limited working wavelength range. In this report, due to the excellent properties of Indium Antimonide, the InSb/Si heterojunction photodetectors are fabricated. Under ambient temperature of 280K, as-prepared photodetectors show a specific detectivity of 9.310¹¹ cm Hz^1/2/W, responsivity of 54 mA/W, on/off ratio of 510⁴ under the laser irradiation of 635 nm. In order to explore the influence of working temperature on device performance, the photoresponse at different temperatures was tested. This report proved that as the working temperature increases, the responsivity and specific detectivity of the device decrease, and the performance of the device becomes worse.

Abstract: Epitaxially overgrowing a semiconductor material with higher bandgap around the QDs has proven to be a crucial approach for improving the PL efficiency and stability of nanocrystals. In this paper, a ZnS shell was deposited around ZnSe nanocrystal cores via a noninjection approach in aqueous media. The deposition procedure conducted at 100°C in a reaction flask in the presence of the shell precursor compounds, together with the crude ZnSe nanocrystal cores and the thiol ligand glutathione. The influences of various experimental variables, including the reaction time, amount of thiourea, as well as pH value, on the growth rate and luminescent properties of the obtained core/shell nanocrystals have been systematically investigated. In comparison with the original ZnSe nanocrystals, the PL efficiency of the obtained ZnSe/ZnS core/shell nanostructures can be improved significantly with a QY up to 62.8%.

Abstract: As the unique properties of semiconductor material, it is made of many semiconductor Hall devices. Semiconductor Hall device has the advantages of simple structure, small volume, long service life, sensitive to magnetic field induction, strong frequency response and large variable voltage output. Hall Effect of semiconductor material is one kind of electromagnetic effects, which has practical significance. It is widely used in measurement technology, electronic technology, automation technology and so on.

Abstract: The establishment of a technique for mercury iodide (HgI2) purification and crystal growth is described, aiming this crystal future application as room temperature radiation semiconductor detectors. Repeated Physical Vapor Transport (PVT) technique was studied for purification and growth of the crystal. To evaluate the purification efficiency, measurements of the impurity concentration were made after each growth, analyzing the trace impurities. A significant decrease of the impurity concentration, resulting from the purification number, was observed. A significant improvement in the HgI2 radiation detector performance was achieved for purer crystals, growing the crystal twice by the PVT technique.

Abstract: The necessity of fixed abrasive CMP in polishing semiconductor materials processing was analyzed. Compared the shortcomings of traditional free abrasive polishing with the advantages of fixed abrasive polishing, the applications of fixed abrasive polishing technology in semiconductor processing were described. A variety of fixed abrasive polishing pad production methods were introduced. The development trend of fixed abrasive polishing was prospected.