Papers by Keyword: Si-Ge

Abstract: The new technique of atomic-scale X-ray Photon Correlation Spectroscopy (aXPCS) makesuse of a coherent X-ray beam to study the dynamics of various processes in condensed matter systems.Particularly atomistic migration mechanisms are still far from being understood in most of intermetallicalloys and in amorphous systems. Special emphasis must be given to the opportunity to measureatomistic diffusion at relatively low temperatures where such measurements were far out of reach withpreviously established methods. The importance of short-range order is demonstrated on the basis ofMonte Carlo simulations.

Abstract: Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi’s, at 9x1017cm-3 level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for Oi’s precipitation, some samples were pre-annealed for 10 h at 1000 K under 105 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.