Papers by Keyword: SiC Growth

Abstract: The heating temperature of the silicon carbide sublimation growth crucible is changed by adjusting the output power of the medium frequency induction coil, and the sintering experiments were carried out using NaCl and Al₂O₃ to observe the morphological changes after sintered under different output power, the corresponding temperature was determined, and the corresponding relationship between the output power and the heating temperature was obtained, the precise temperature control was realized. The results of temperature measurement were compared with that of the infrared photoelectric pyrometer. Based on this, the SiC grains were prepared according to the temperature measurement results. The Raman spectroscopy result shows that the SiC polytype was 6H, the SiC grains distributions are homogeneous, and the size of the SiC grains is uniform and dense.

Abstract: We demonstrate 4^o off-axis 4H-SiC bulk crystal growth using physical vapor transport method (PVT). A radial 6-folded pattern is discovered in the facetted region of the growth surface by differential interference contrast microscopy. SICA88 Wafer Inspection/Review System was used to further inspect such 6-folded pattern with photoluminescence channel for wafers cut from that 4H-SiC crystal. It was found that the 6-folded pattern exists in all the wafers from the bottom to the top of that crystal. Several radial 6-folded patterns are found in the bottom wafer near the seed, but there is only one in the other two wafers. Defects distribution of these wafers after etched were also researched to find out the relationship between the radial 6-folded pattern and the defects. Based on the results, the formation and evolution mechanism of the radial 6-folded pattern on 4o off-axis 4H-SiC crystal is discussed.

Abstract: We describe a procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC on (001) Si substrates. A 100 – 150 nm thick SiC buffer was deposited after a standard carbonization at 1125 °C, while increasing the temperature from 1125 °C to 1380 °C. Ramp time influenced the quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface. After the optimization of the buffer, to demonstrate its effectiveness, a high-quality 3C-SiC was grown, with excellent surface morphology, crystallinity and low stress.

Abstract: Modeling and simulation of the SiC growth process is sufficiently mature to be used as a training tool for engineers as well as a decision making tool, e.g. when building new process equipment or up-scaling old ones. It is possible to simulate accurately temperature and deposition distributions, as well as doping. The key of success would be the combined use of simulation, experiments and characterization in a "daily interaction". The main limitation in SiC growth modeling is the accurate knowledge of physical, thermal, radiative, chemical and electrical data for the different components of the reactor. This is the weakest link in developing completely predictive models. In addition, the link between the thermochemical history of the grown material and its structure and defects still needs further development and input of experimental data.